ElecSuper FQT7N10LTF ES 100V N channel MOSFET in SOT 223 package suitable for DC DC power management
Key Attributes
Model Number:
FQT7N10LTF-ES
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-40℃~+150℃
RDS(on):
120mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
650pF
Pd - Power Dissipation:
3.1W
Mfr. Part #:
FQT7N10LTF-ES
Package:
SOT-223
Product Description
FQT7N10LTF-ES SuperMOS - SOT-223 100V N-channel MOSFET
The FQT7N10LTF-ES is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Package: SOT-223
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: China (implied by www.elecsuper.com and copyright notice)
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.7 | 2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=4A | 120 | 150 | m | |
| VGS=4.5V, ID=3A | 130 | 180 | m | |||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 650 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 30 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 25 | pF | ||
| Body Diode Forward Voltage | VSD | VGS=0V, IS=4A | 1.5 | V | ||
2504101957_ElecSuper-FQT7N10LTF-ES_C22464635.pdf
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