Rugged P Channel Enhancement MOSFET ElecSuper BSS308PEH6327 ES for DC DC Conversion and Power Switch
Key Attributes
Model Number:
BSS308PEH6327-ES
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.8A
RDS(on):
46mΩ@10V;62mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
63pF
Number:
1 P-Channel
Input Capacitance(Ciss):
550pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
6.5nC@10V
Mfr. Part #:
BSS308PEH6327-ES
Package:
SOT-23
Product Description
Product Overview
The BSS308PEH6327-ES is a P-Channel enhancement MOS Field Effect Transistor from ElecSuper, utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering fast switching, high-density cell design, and a reliable, rugged, and avalanche-rated performance with low leakage current. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: SuperMOS
- Origin: ElecSuper Incorporated
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | -3.8 | A | ||
| Continuous Drain Current | ID | TA=75°C | -2.9 | A | ||
| Maximum Power Dissipation | PD | TA=25°C | 1.4 | W | ||
| Pulsed Drain Current | IDM | -15.2 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 90 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -0.9 | -1.5 | -2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-3A | 46 | 60 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-3A | 62 | 80 | mΩ | |
| Input Capacitance | CISS | VGS=0V, VDS =-15V, f=1MHz | 550 | pF | ||
| Output Capacitance | COSS | 75 | pF | |||
| Reverse Transfer Capacitance | CRSS | 63 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V, ID =-4A | 6.5 | nC | ||
| Gate-to-Source Charge | QGS | 1.1 | nC | |||
| Gate-to-Drain Charge | QGD | 1.3 | nC | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V, RL=3.5Ω, RG=3Ω | 14 | ns | ||
| Rise Time | tr | 60 | ns | |||
| Turn-Off Delay Time | td(OFF) | 19 | ns | |||
| Fall Time | tf | 11 | ns | |||
| Body Diode Characteristics | ||||||
| Forward Voltage | VSD | VGS=0V, IS=-1.0A | -0.7 | -1.5 | V | |
2504101957_ElecSuper-BSS308PEH6327-ES_C21713846.pdf
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