Load Switch and DC DC Converter MOSFET FMS Formosa Microsemi AS3423B with Trench Process Technology
Key Attributes
Model Number:
AS3423B
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Number:
1 P-Channel
Input Capacitance(Ciss):
500pF@10V
Pd - Power Dissipation:
1W
Mfr. Part #:
AS3423B
Package:
SOT-23-3L
Product Description
Product Overview
The AS3423B is a P-Channel Enhancement Mode MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is designed for applications such as load switches for portable devices and DC/DC converters.
Product Attributes
- Brand: Formosa MS
- Package: SOT-23-3L
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Product | V(BR)DSS | RDS(on)MAX | ID | Package | Document ID | Issued Date | Revised Date | Revision |
| AS3423B | -20V | 90m@-4.5V | -3A | SOT-23-3L | FM-3150321 | 2003/03/08 | 2012/05/16 | D |
| AS3423B | -20V | 110m@-2.5V | -3A | SOT-23-3L | FM-3150321 | 2003/03/08 | 2012/05/16 | D |
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =-250A | -20 | V | ||
| Zero gate voltage drain current | IDSS | VDS =-16V,VGS = 0V | -1 | A | ||
| Gate-body leakage current | IGSS | VGS =10V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =-250A | -0.5 | -1.5 | V | |
| Drain-source on-resistance | RDS(on) | VGS =-4.5V, ID =-3A | 70 | 90 | m | |
| Drain-source on-resistance | RDS(on) | VGS =-2.5V, ID =-2A | 90 | 110 | m | |
| Input Capacitance | Ciss | VDS =-10V,VGS =0V,f =1MHz | 500 | pF | ||
| Output Capacitance | Coss | VDS =-10V,VGS =0V,f =1MHz | 100 | pF | ||
| Turn-on delay time | td(on) | VDD=-10V, ID =-3A, RGEN=6 | 10 | nS | ||
| Turn-off delay time | td(off) | VDD=-10V, ID =-3A, RGEN=6 | 60 | nS | ||
| Diode Forward voltage | VDS | VGS =0V, IS=-0.75A | -1.5 | V |
| Parameter | Symbol | Value | Unit |
| Continuous Drain Current | ID | -3 | A |
| Pulsed Drain Current | IDM | -10 | A |
| Power Dissipation | PD | 1 | W |
| Junction Temperature | TJ | 150 | |
| Storage Temperature | TSTG | -55 ~ +150 | |
| Gate-Source Voltage | VGS | 10 | V |
| Drain-Source Voltage | VDS | -20 | V |
2410121513_FMS-Formosa-Microsemi-AS3423B_C341542.pdf
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