ElecSuper 30N06 ES N Channel MOSFET Suitable for DC DC Conversion Charging Circuits and Power Switch
Key Attributes
Model Number:
30N06-ES
Product Custom Attributes
Pd - Power Dissipation:
25W
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
20A;16A
Operating Temperature -:
-
RDS(on):
26mΩ@10V;33mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
51pF
Number:
1 N-channel
Output Capacitance(Coss):
62pF
Input Capacitance(Ciss):
860pF
Gate Charge(Qg):
20.3nC@10V
Mfr. Part #:
30N06-ES
Package:
TO-252
Product Description
Product Overview
The 30N06-ES is an N-Channel enhancement MOS Field Effect Transistor from ElecSuper, utilizing advanced technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering a reliable and rugged design with high-density cell construction. This product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Limit | Unit | Test Conditions | Typ | Max |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 20 | A | TC=25°C | ||
| Continuous Drain Current | ID | 16 | A | TC=75°C | ||
| Maximum Power Dissipation | PD | 25 | W | |||
| Pulsed Drain Current | IDM | 80 | A | |||
| Avalanche Current, Single Pulsed | IAS | 16 | A | a | ||
| Avalanche Energy, Single Pulsed | EAS | 16 | mJ | a | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 to 150 | °C | |||
| Junction-to-Case Thermal Resistance | RθJC | °C/W | Steady State | 5 | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | ||
| Zero Gate Voltage Drain Current | IDSS | uA | VDS=60V, VGS=0V | 1.0 | ||
| Gate-to-Source Leakage Current | IGSS | nA | VDS=0V, VGS=±20V | ±100 | ||
| Gate Threshold Voltage | VGS(TH) | V | VGS=VDS, ID=250uA | 1.0 | 2.5 | |
| Drain-to-Source On-resistance | RDS(on) | 26 | mΩ | VGS=10V, ID=20A | 26 | 33 |
| Drain-to-Source On-resistance | RDS(on) | 33 | mΩ | VGS=4.5V, ID=10A | 33 | 45 |
| Forward Trans conductance | gFS | S | VDS=5.0V, ID=20A | 40 | ||
| Input Capacitance | CISS | pF | VGS=0V, f=1MHz, VDS=25V | 860 | ||
| Output Capacitance | COSS | pF | VGS=0V, f=1MHz, VDS=25V | 62 | ||
| Reverse Transfer Capacitance | CRSS | pF | VGS=0V, f=1MHz, VDS=25V | 51 | ||
| Total Gate Charge | QG(TOT) | nC | VGS=10V, VDS=30V, ID=10A | 20.3 | ||
| Gate-to-Source Charge | QGS | nC | VGS=10V, VDS=30V, ID=10A | 3.8 | ||
| Gate-to-Drain Charge | QGD | nC | VGS=10V, VDS=30V, ID=10A | 5.5 | ||
| Turn-On Delay Time | td(ON) | ns | VGS=10V, VDS=30V, ID=5A, RG=1.8Ω | 6 | ||
| Rise Time | tr | ns | VGS=10V, VDS=30V, ID=5A, RG=1.8Ω | 6 | ||
| Turn-Off Delay Time | td(OFF) | ns | VGS=10V, VDS=30V, ID=5A, RG=1.8Ω | 19 | ||
| Fall Time | tf | ns | VGS=10V, VDS=30V, ID=5A, RG=1.8Ω | 3 | ||
| Forward Voltage | VSD | V | VGS=0V, IS=10A | 0.7 | 1.5 | |
2504101957_ElecSuper-30N06-ES_C19725101.pdf
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