ElecSuper BSS84AKW115ES P Channel MOSFET Designed for DC DC Conversion and Power Switch Applications
Key Attributes
Model Number:
BSS84AKW,115(ES)
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
180mA
RDS(on):
5.2Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.6pF
Number:
1 P-Channel
Output Capacitance(Coss):
4pF
Pd - Power Dissipation:
300mW
Input Capacitance(Ciss):
17pF
Gate Charge(Qg):
1.1nC@4.5V
Mfr. Part #:
BSS84AKW,115(ES)
Package:
SOT-323
Product Description
Product Overview
The BSS84AKW,115(ES) is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering fast switching, high density cell design, and a reliable, rugged construction.
Product Attributes
- Brand: ElecSuper
- Model: BSS84AKW,115(ES)
- Package: SOT-323
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | -0.18 | A | ||
| Continuous Drain Current | ID | TA=100°C | -0.12 | A | ||
| Maximum Power Dissipation | PD | 0.30 | W | |||
| Pulsed Drain Current | IDM | -0.74 | A | |||
| Operating Junction Temperature | TJ | -55 | +150 | °C | ||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 417 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-60V | -100 | nA | ||
| Gate-to-Source Leakage Current | IGSS | VGS=±20V, VDS=0V | ±10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.1 | -1.6 | -2.2 | V |
| Drain-to-Source On-resistance | RDS(on) | VGS=-10V, ID=-0.15A | 3.5 | 5.2 | Ω | |
| Drain-to-Source On-resistance | RDS(on) | VGS=-4.5V, ID=-0.1A | 4.5 | 6.3 | Ω | |
| Input Capacitance | CISS | VGS=0V, VDS =-25V, f=1MHz | 17 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-25V, f=1MHz | 4 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-25V, f=1MHz | 1.6 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=-4.5V, VDS=-25V, ID=-0.1A | 1.1 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-4.5V, VDS=-25V, ID=-0.1A | 0.3 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-4.5V, VDS=-25V, ID=-0.1A | 0.2 | nC | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-25V, ID=-0.1A, RG=6Ω | 4.8 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-25V, ID=-0.1A, RG=6Ω | 19 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-25V, ID=-0.1A, RG=6Ω | 52 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-25V, ID=-0.1A, RG=6Ω | 32 | ns | ||
| Body Diode Characteristics | ||||||
| Forward Voltage | VSD | VGS=0V, ISD=-0.15A | -0.45 | -1.5 | V | |
2411121459_ElecSuper-BSS84AKW-115-ES_C42379937.pdf
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