N channel MOSFET ElecSuper ES3134KZ featuring trench technology and low leakage current for switching
Key Attributes
Model Number:
ES3134KZ
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
880mA
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
250mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
750mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
2 N-Channel
Output Capacitance(Coss):
20pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
33pF
Gate Charge(Qg):
800pC@4.5V
Mfr. Part #:
ES3134KZ
Package:
SOT-363
Product Description
Product Overview
The ES3134KZ is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering high density cell design for low RDS(on), and is reliable, rugged, and avalanche rated with low leakage current. This product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Product Name: SuperMOS SOT-363
- Part Number: ES3134KZ
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | TA=25C | 0.88 | A | ||
| ID | TA=75C | 0.68 | A | |||
| Maximum Power Dissipation | PD | 0.35 | W | |||
| Pulsed Drain Current | IDM | 3.52 | A | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||
| Junction-to-Ambient Thermal Resistance | RJA | t 10s | 357 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=10V | 10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.35 | 0.75 | 1.1 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=0.5A | 250 | 330 | m | |
| RDS(on) | VGS=2.5V, ID=0.4A | 320 | 430 | m | ||
| RDS(on) | VGS=1.8V, ID=0.2A | 450 | 730 | m | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 33 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=10V | 20 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=10V | 10 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=0.5A | 0.8 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=0.5A | 0.3 | |||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=0.5A | 0.15 | |||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, ID=0.5A, RG=10 | 4 | ns | ||
| Rise Time | tr | VGS=4.5V, VDS=10V, ID=0.5A, RG=10 | 18.8 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=4.5V, VDS=10V, ID=0.5A, RG=10 | 10 | ns | ||
| Fall Time | tf | VGS=4.5V, VDS=10V, ID=0.5A, RG=10 | 23 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=0.5A | 1.5 | V | ||
2504101957_ElecSuper-ES3134KZ_C7527980.pdf
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