Durable P Channel MOSFET ElecSuper SI2305CDS ES for Charging Circuit and Power Switch Applications
Key Attributes
Model Number:
SI2305CDS(ES)
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
3.8A
RDS(on):
40mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
101pF
Output Capacitance(Coss):
118pF
Input Capacitance(Ciss):
500pF
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
8.5nC@4.5V
Mfr. Part #:
SI2305CDS(ES)
Package:
SOT-23
Product Description
Product Overview
The SI2305CDS(ES) is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Model: SI2305CDS(ES)
- Package: SOT-23
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: Incorporated
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=-250uA | -12 | V | ||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25°C | -3.8 | A | ||
| TA=100°C | -2.3 | A | ||||
| Maximum Power Dissipation | PD | TA=25°C | 1.2 | W | ||
| Pulsed Drain Current | IDM | -15 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | (t ≤10s) | 104 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -12 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-12V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±12V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -0.4 | -0.62 | -1.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-3.8A | 29 | 40 | mΩ | |
| VGS=-2.5V, ID=-3A | 45 | 60 | mΩ | |||
| VGS=-1.8V, ID=-2.5A | 67 | 85 | mΩ | |||
| Input Capacitance | CISS | VGS=0V, VDS =-6V f=1MHz | 500 | pF | ||
| Output Capacitance | COSS | 118 | pF | |||
| Reverse Transfer Capacitance | CRSS | 101 | pF | |||
| Total Gate Charge | QG | VGS=-4.5V, VDS=-6V ID =-3.8A | 8.5 | nC | ||
| Gate-to-Source Charge | QGS | 1.5 | nC | |||
| Gate-to-Drain Charge | QGD | 2.6 | nC | |||
| Turn-On Delay Time | td(ON) | VGS=-4.5V, VDS=-6V ID=-3.8A, RG=3Ω | 6 | ns | ||
| Rise Time | tr | 35 | ns | |||
| Turn-Off Delay Time | td(OFF) | 50 | ns | |||
| Fall Time | tf | 52 | ns | |||
| Forward Voltage | VSD | VGS=0V, IS=-3.8A | -1.5 | V | ||
2504101957_ElecSuper-SI2305CDS-ES_C42434109.pdf
Related Products
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
