Power Switch and DC DC Conversion Solutions with ElecSuper ESN7410 N Channel Enhancement Mode MOSFET
Key Attributes
Model Number:
ESN7410
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
25A
RDS(on):
14mΩ@10V;23mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
60pF
Number:
1 N-channel
Output Capacitance(Coss):
73pF
Pd - Power Dissipation:
20.8W
Input Capacitance(Ciss):
499pF
Gate Charge(Qg):
9.8nC@10V
Mfr. Part #:
ESN7410
Package:
PDFN3x3-8L
Product Description
Product Overview
The ESN7410 is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications, offering high density cell design, reliability, and low leakage current. This is a standard, Pb-free product.
Product Attributes
- Brand: ElecSuper
- Model: ESN7410
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25°C | 25 | A | ||
| Continuous Drain Current | ID | TC=75°C | 19 | A | ||
| Maximum Power Dissipation | PD | TC=25°C | 20.8 | W | ||
| Maximum Power Dissipation | PD | TC=75°C | 12.5 | W | ||
| Pulsed Drain Current | IDM | a | 100 | A | ||
| Avalanche Current, Single Pulsed | IAS | b | 11 | A | ||
| Avalanche Energy, Single Pulsed | EAS | b | 18 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Case Thermal Resistance | RθJC | a | 6.0 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.5 | 2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=8A | 14 | 21 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=7A | 23 | 35 | mΩ | |
| Forward Transconductance | gFS | VDS=5.0V, ID=8A | 40 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=15V | 499 | 660 | pF | |
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=15V | 73 | 143 | pF | |
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=15V | 60 | 77 | pF | |
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=15V, ID=8A | 9.8 | 12 | nC | |
| Gate-to-Source Charge | QGS | VGS=10V, VDS=15V, ID=8A | 1.8 | 2.2 | nC | |
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=15V, ID=8A | 2.2 | 3 | nC | |
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=15V, RL=2Ω, RGEN=3Ω | 5 | ns | ||
| Rise Time | tr | VGS=10V, VDS=15V, RL=2Ω, RGEN=3Ω | 3.2 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=15V, RL=2Ω, RGEN=3Ω | 24 | ns | ||
| Fall Time | tf | VGS=10V, VDS=15V, RL=2Ω, RGEN=3Ω | 6 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=1.0A | 0.45 | 1.5 | V | |
2504101957_ElecSuper-ESN7410_C5249698.pdf
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