Power Switching MOSFET ElecSuper AO4406AL N Channel with Low Gate Leakage and High Density Cell Design
Key Attributes
Model Number:
AO4406AL
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10mΩ@10V;17mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
82pF
Number:
1 N-channel
Output Capacitance(Coss):
103pF
Input Capacitance(Ciss):
805pF
Pd - Power Dissipation:
2.3W
Gate Charge(Qg):
16nC@10V
Mfr. Part #:
AO4406AL
Package:
SOP8
Product Description
Product Overview
The AO4406AL is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering high density cell design, a reliable and rugged construction, and avalanche rating. This is a standard product and is Pb-free.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.1 | 1.6 | 2.1 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=15A | 10 | 13 | m | |
| VGS=4.5V, ID=10A | 17 | 22.5 | m | |||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=15V | 805 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=15V | 103 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=15V | 82 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=0 to 10V, VDS=15V, ID=15A | 16 | nC | ||
| Gate-to-Source Charge | QGS | VGS=0 to 10V, VDS=15V, ID=15A | 3.6 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=0 to 10V, VDS=15V, ID=15A | 3.4 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=15V, ID=15A, RGEN=3 | 6 | ns | ||
| Rise Time | tr | VGS=10V, VDS=15V, ID=15A, RGEN=3 | 16 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=15V, ID=15A, RGEN=3 | 17 | ns | ||
| Fall Time | tf | VGS=10V, VDS=15V, ID=15A, RGEN=3 | 5 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=10A | 1.2 | V | ||
| Continuous Drain Current | ID | TA=25C | 20 | A | ||
| Continuous Drain Current | ID | TA=100C | 12 | A | ||
| Maximum Power Dissipation | PD | TA=25C | 2.3 | W | ||
| Pulsed Drain Current | IDM | a | 80 | A | ||
| Operating Junction Temperature | TJ | -55 | 150 | C | ||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||
| Junction-to-Ambient Thermal Resistance | RJA | a, t 10 s | 55 | C/W |
2504101957_ElecSuper-AO4406AL_C5224299.pdf
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