Power Switch MOSFET ElecSuper ESE6080A Featuring Low RDS ON and Enhanced Trench Technology
Key Attributes
Model Number:
ESE6080A
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
58.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7mΩ@10V;8.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
180pF
Output Capacitance(Coss):
201pF
Input Capacitance(Ciss):
2.876nF
Pd - Power Dissipation:
58.4W
Gate Charge(Qg):
77nC@10V
Mfr. Part #:
ESE6080A
Package:
TO-220
Product Description
Product Overview
The ESE6080A is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuits. This product is Pb-free and Halogen free.
Product Attributes
- Brand: SuperMOS
- Model: ESE6080A
- Package: TO-220
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: Copyright ElecSuper Incorporated
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.2 | 1.6 | 2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 7 | 10 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=10A | 8.5 | 14 | m | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 2876 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 201 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 180 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=0 to 10V, VDS=30V, ID=30A | 77 | nC | ||
| Gate-to-Source Charge | QGS | VGS=0 to 10V, VDS=30V, ID=30A | 14 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=0 to 10V, VDS=30V, ID=30A | 15 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=30V, ID=30A, RG=1.8 | 13 | ns | ||
| Rise Time | tr | VGS=10V, VDS=30V, ID=30A, RG=1.8 | 77 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=30V, ID=30A, RG=1.8 | 50 | ns | ||
| Fall Time | tf | VGS=10V, VDS=30V, ID=30A, RG=1.8 | 106 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=30A | 1.2 | V | ||
| Continuous Drain Current | ID | TC=25C | 58.6 | A | ||
| Continuous Drain Current | ID | TC=100C | 37.0 | A | ||
| Maximum Power Dissipation | PD | 58.4 | W | |||
| Pulsed Drain Current | IDM | 234.4 | A | |||
| Single Pulsed Avalanche Current | IAS | EAS condition: TJ=25, VDD=30V, VG=10V, L=0.5mH, Rg=25 | 22 | A | ||
| Single Pulsed Avalanche Energy | EAS | EAS condition: TJ=25, VDD=30V, VG=10V, L=0.5mH, Rg=25 | 121 | mJ | ||
| Operating Junction Temperature | TJ | -55 | 150 | C | ||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||
| Junction-to-Case Thermal Resistance | RJC | 2.14 | C/W |
2504101957_ElecSuper-ESE6080A_C42412247.pdf
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