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quality Low Gate Charge N Channel MOSFET ElecSuper BSS123-7-F Ideal for Power Switching and Charging Circuits factory
quality Low Gate Charge N Channel MOSFET ElecSuper BSS123-7-F Ideal for Power Switching and Charging Circuits factory

Low Gate Charge N Channel MOSFET ElecSuper BSS123-7-F Ideal for Power Switching and Charging Circuits

Key Attributes
Model Number: BSS123-7-F
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
290mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.7Ω@10V
Gate Threshold Voltage (Vgs(th)):
1.8V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2pF
Number:
1 N-channel
Output Capacitance(Coss):
2.8pF
Input Capacitance(Ciss):
29pF
Pd - Power Dissipation:
350mW
Mfr. Part #:
BSS123-7-F
Package:
SOT-23
Product Description

Product Overview

The BSS123-7-F is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and halogen-free.

Product Attributes

  • Brand: ElecSuper
  • Model: BSS123-7-F
  • Package: SOT-23
  • Material: Halogen free
  • Certifications: UL 94V-0
  • Origin: ElecSuper Incorporated

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
Absolute Maximum Ratings & Thermal Characteristics
Drain-Source VoltageBVDSS100V
Gate-Source VoltageVGS±20V
Continuous Drain CurrentIDTA=25°C0.29A
TA=70°C0.20A
Maximum Power DissipationPD0.35W
Operating Junction TemperatureTJ150°C
Lead TemperatureTL260°C
Storage Temperature RangeTstg-55150°C
Junction-to-Ambient Thermal ResistanceRθJAt ≤10s357°C/W
Electrical Characteristics
Drain-to-Source Breakdown VoltageBVDSSVGS=0V, ID=250µA100V
Zero Gate Voltage Drain CurrentIDSSVDS=100V, VGS=0V100nA
Gate-to-source Leakage CurrentIGSSVDS=0V, VGS=±20V±100nA
Gate Threshold VoltageVGS(TH)VGS=VDS, ID=250µA1.01.82.5V
Drain-to-source On-resistanceRDS(on)VGS=10V, ID=0.2A2.73.5Ω
VGS=4.5V, ID=0.18A2.954.2Ω
Input CapacitanceCISSVGS=0V, f=1MHz, VDS=25V29pF
Output CapacitanceCOSSVGS=0V, f=1MHz, VDS=25V2.8pF
Reverse Transfer CapacitanceCRSSVGS=0V, f=1MHz, VDS=25V2.0pF
Gate ResistanceRgf=1MHz1.3Ω
Forward VoltageVSDVGS=0V, IS=0.2A0.451.5V

2504101957_ElecSuper-BSS123-7-F_C41365200.pdf

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