Low Gate Charge N Channel MOSFET ElecSuper AO4468 ES Ideal for Charging Circuits and Power Switching
Key Attributes
Model Number:
AO4468-ES
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
102pF
Number:
1 N-channel
Output Capacitance(Coss):
122pF
Input Capacitance(Ciss):
1.06nF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
21nC@10V
Mfr. Part #:
AO4468-ES
Package:
SOP8
Product Description
Product Overview
The AO4468-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Product Series: SuperMOS
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.5 | 2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=10A | 9 | 11 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=5A | 13 | 16 | m | |
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=15V | 1060 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=15V | 122 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=15V | 102 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=15V, ID=10A | 21 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=15V, ID=10A | 3 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=15V, ID=10A | 5 | nC | ||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=15V, ID=10A, RG=3 | 4 | ns | ||
| Rise Time | tr | VGS=10V, VDS=15V, ID=10A, RG=3 | 2 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=15V, ID=10A, RG=3 | 13 | ns | ||
| Fall Time | tf | VGS=10V, VDS=15V, ID=10A, RG=3 | 7 | ns | ||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, IS=10A | 1.5 | V | ||
2504101957_ElecSuper-AO4468-ES_C21713851.pdf
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