P Channel MOSFET ElecSuper SI3139KE TP ES optimized for charging circuit and power switch efficiency
Key Attributes
Model Number:
SI3139KE-TP-ES
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
500mA
RDS(on):
580mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
620mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 P-Channel
Output Capacitance(Coss):
20pF
Pd - Power Dissipation:
180mW
Input Capacitance(Ciss):
71pF
Gate Charge(Qg):
1.25nC@4.5V
Mfr. Part #:
SI3139KE-TP-ES
Package:
SOT-523
Product Description
Product Overview
The SI3139KE-TP-ES is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and halogen-free.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=10V | 10 | uA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -0.35 | -0.62 | -1.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-0.5A | 580 | 850 | m | |
| VGS=-2.5V, ID=-0.3A | 855 | 1200 | m | |||
| VGS=-1.8V, ID=-0.2A | 1350 | 2000 | m | |||
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=-10V | 71 | pF | ||
| Output Capacitance | COSS | 20 | pF | |||
| Reverse Transfer Capacitance | CRSS | 15 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=-4.5V, VDS=-10V, ID=-0.5A | 1.25 | nC | ||
| Gate-to-Source Charge | QGS | 0.38 | ||||
| Gate-to-Drain Charge | QGD | 0.28 | ||||
| SWITCHING CHARACTERISTICS | ||||||
| Turn-On Delay Time | td(ON) | VGS=-4.5V, VDS=-10V, RL=2.5, RG=-3 | 4 | ns | ||
| Rise Time | tr | 19 | ns | |||
| Turn-Off Delay Time | td(OFF) | 16 | ns | |||
| Fall Time | tf | 25 | ns | |||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, IS=-0.5A | -1.5 | V | ||
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | TA=25C | -0.5 | A | ||
| TA=75C | -0.4 | A | ||||
| Maximum Power Dissipation | PD | 0.18 | W | |||
| Pulsed Drain Current | IDM | -2.6 | A | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||
| Junction-to-Ambient Thermal Resistance | RJA | t 10s | 694 | C/W | ||
2504101957_ElecSuper-SI3139KE-TP-ES_C7528007.pdf
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