ElecSuper FDN5618P ES P Channel MOSFET Designed for Low Gate Charge in Charging Circuit Applications
Key Attributes
Model Number:
FDN5618P-ES
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
170mΩ@10V;190mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF
Output Capacitance(Coss):
28pF
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
496pF
Gate Charge(Qg):
15.8nC@10V
Mfr. Part #:
FDN5618P-ES
Package:
SOT-23
Product Description
Product Overview
The FDN5618P-ES is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free.
Product Attributes
- Brand: SuperMOS (ElecSuper)
- Origin: ElecSuper Incorporated
- Material: Halogen free
- Color: Not specified
- Certifications: UL 94V-0
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.1 | -1.6 | -2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-1.5A | 155 | 201 | m | |
| VGS=-4.5V, ID=-1A | 195 | 253 | ||||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=-25V | 533 | pF | ||
| Output Capacitance | COSS | 29 | pF | |||
| Reverse Transfer Capacitance | CRSS | 23 | pF | |||
| Total Gate Charge | QG(TOT) | VGS=0 to -10V, VDS=-30V, ID=-1.5A | 9.5 | nC | ||
| Gate-to-Source Charge | QGS | 1.5 | ||||
| Gate-to-Drain Charge | QGD | 2 | ||||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDD=-30V, ID= -1.5A, RG=3 | 45 | ns | ||
| Rise Time | tr | 33 | ||||
| Turn-Off Delay Time | td(OFF) | 15 | ||||
| Fall Time | tf | 11 | ||||
| Forward Voltage | VSD | VGS=0V, IS=-1.5A | -1.2 | V | ||
2507230935_ElecSuper-FDN5618P-ES_C39832214.pdf
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