Power Switch P Channel MOSFET ElecSuper ES3139KE Featuring Low Gate Charge and Pb Free Construction
Key Attributes
Model Number:
ES3139KE
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
650mA
RDS(on):
580mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
620mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 P-Channel
Output Capacitance(Coss):
20pF
Pd - Power Dissipation:
900mW
Input Capacitance(Ciss):
71pF
Gate Charge(Qg):
1.25nC@4.5V
Mfr. Part #:
ES3139KE
Package:
DFN1006-3
Product Description
Product Overview
The ES3139KE is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Product Name: SuperMOS DFN1006-3L
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Pb-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25°C | -0.65 | A | ||
| Continuous Drain Current | ID | TA=70°C | -0.52 | A | ||
| Maximum Power Dissipation | PD | 0.9 | W | |||
| Pulsed Drain Current | IDM | -2.0 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | t ≤10s | 138 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±10V | ±10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -0.35 | -0.62 | -1.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-0.5A | 580 | 850 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-2.5V, ID=-0.3A | 855 | 1200 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-1.8V, ID=-0.2A | 1350 | 2000 | mΩ | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=-10V | 71 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=-10V | 20 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=-10V | 15 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=-4.5V, VDS=-10V, ID=-0.5A | 1.25 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-4.5V, VDS=-10V, ID=-0.5A | 0.38 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-4.5V, VDS=-10V, ID=-0.5A | 0.28 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-4.5V, VDS=-10V, RL=2.5Ω, RG=-3Ω | 4 | ns | ||
| Rise Time | tr | VGS=-4.5V, VDS=-10V, RL=2.5Ω, RG=-3Ω | 19 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-4.5V, VDS=-10V, RL=2.5Ω, RG=-3Ω | 16 | ns | ||
| Fall Time | tf | VGS=-4.5V, VDS=-10V, RL=2.5Ω, RG=-3Ω | 25 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=-0.5A | -1.5 | V | ||
2504101957_ElecSuper-ES3139KE_C7527987.pdf
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