Low Gate Charge MOSFET ElecSuper ESBSS138WT1G Ideal for Power Switch and Charging Applications
Key Attributes
Model Number:
ESBSS138WT1G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
RDS(on):
1.8Ω@10V,0.3A
Gate Threshold Voltage (Vgs(th)):
1.1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
1.3pF@25V
Input Capacitance(Ciss):
15pF@25V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
1.6nC@4.5V
Mfr. Part #:
ESBSS138WT1G
Package:
SOT-323
Product Description
Product Overview
The ESBSS138WT1G is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Origin: Not specified
- Material: Halogen free
- Color: Not specified
- Certifications: UL 94V-0
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 0.36 | A | |||
| Maximum Power Dissipation | PD | 236 | mW | |||
| Pulsed Drain Current | IDM | a | 1.44 | A | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | to | 150 | °C | |
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 530 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=10mA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V,TJ=25°C | 1.0 | uA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=40V, VGS=0V, TJ=125°C | 100 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.8 | 1.0 | 1.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=0.3A | 1.5 | 1.9 | Ω | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=0.2A | 1.6 | 2.5 | Ω | |
| Drain-to-source On-resistance | RDS(on) | VGS=2.5V, ID=0.1A | 2.7 | 4.5 | Ω | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS =25V | 25 | 50 | pF | |
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS =25V | 9.7 | 22 | pF | |
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS =25V | 2.2 | 5 | pF | |
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=25V, ID=0.3A | 0.65 | 1 | nC | |
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=25V, ID=0.3A | 0.2 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=25V, ID=0.3A | 0.23 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=25V, ID=0.3A, RG=6Ω | 2.3 | 5 | ns | |
| Rise Time | tr | VGS=10V, VDS=25V, ID=0.3A, RG=6Ω | 19.2 | 40 | ns | |
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=25V, ID=0.3A, RG=6Ω | 6.3 | 12 | ns | |
| Fall Time | tf | VGS=10V, VDS=25V, ID=0.3A, RG=6Ω | 23 | 50 | ns | |
| Forward Voltage | VSD | VGS=0V, IS=0.5A | 0.86 | 1.5 | V | |
2504101957_ElecSuper-ESBSS138WT1G_C42420861.pdf
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