ElecSuper 2N7002K T1 GE3 ES N Channel MOSFET for PWM load switch and DC DC converter power applications
Key Attributes
Model Number:
2N7002K-T1-GE3-ES
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
380mA
Operating Temperature -:
-40℃~+150℃
RDS(on):
2.06Ω@4.5V,0.2A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
8pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
45pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
2nC@10V
Mfr. Part #:
2N7002K-T1-GE3-ES
Package:
SOT23-3L
Product Description
Product Overview
The 2N7002K-T1-GE3-ES is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) with low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, as well as PWM applications, load switches, and power management in portable/desktop PCs. This standard product is Pb-free and made from Halogen-free material.
Product Attributes
- Brand: SuperMOS
- Origin: ElecSuper Incorporated
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | BVDSS | VGS=0V, ID=10mA | 60 | V | ||
| IDSS | VDS=60V, VGS=0V | 1.0 | uA | |||
| IGSS | VDS=0V, VGS=20V | 10 | uA | |||
| ON CHARACTERISTICS | VGS(TH) | VGS=VDS, ID=250uA | 0.8 | 1.5 | 2.5 | V |
| RDS(on) | VGS=10V, ID=0.3A | 1.75 | 3 | |||
| RDS(on) | VGS=4.5V, ID=0.2A | 2.06 | 4 | |||
| CHARGES, CAPACITANCES AND GATE RESISTANCE | CISS | VGS=0V, f=1MHz, VDS=10V | 30.5 | 45 | pF | |
| COSS | 5.5 | 10 | pF | |||
| CRSS | 4.1 | 8 | pF | |||
| TOTAL GATE CHARGE | QG(TOT) | VGS=10V, VDS=30V, ID=0.2A | 1.12 | 2 | nC | |
| QGS | 0.1 | 0.2 | ||||
| GATE-TO-DRAIN CHARGE | QGD | 0.23 | 0.5 | |||
| SWITCHING CHARACTERISTICS | td(ON) | VGS=10V, VDS=30V, ID=0.2A, RG=6 | 3 | 6 | ns | |
| tr | 5 | 10 | ||||
| TURN-OFF DELAY TIME | td(OFF) | 14 | 27 | ns | ||
| tf | 9 | 17 | ||||
| BODY DIODE CHARACTERISTICS | VSD | VGS=0V, IS=1A | 1.5 | V | ||
| CONTINUOUS DRAIN CURRENT | ID | TA=25 | 0.38 | A | ||
| TA=100 | 0.25 | |||||
| MAXIMUM POWER DISSIPATION | PD | 350 | mW | |||
| PULSED DRAIN CURRENT | IDM | a | 1.5 | A | ||
| OPERATING JUNCTION TEMPERATURE | TJ | 150 | C | |||
| STORAGE TEMPERATURE RANGE | Tstg | -55 | 150 | C | ||
| JUNCTION-TO-AMBIENT THERMAL RESISTANCE | RJA | Single Operation | 300 | C/W |
2411220030_ElecSuper-2N7002K-T1-GE3-ES_C5224211.pdf
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