P Channel MOSFET ElecSuper ESE01P13K Designed for DC DC Conversion and Charging Circuit Applications
Key Attributes
Model Number:
ESE01P13K
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
10A
RDS(on):
221mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
52pF
Pd - Power Dissipation:
34W
Input Capacitance(Ciss):
2.577nF
Output Capacitance(Coss):
66pF
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
ESE01P13K
Package:
TO-252
Product Description
Product Overview
The ESE01P13K is a P-Channel enhancement MOS Field Effect Transistor from ElecSuper. It utilizes advanced trench technology to offer excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Origin: Not specified
- Material: Halogen free
- Color: Not specified
- Certifications: UL 94V-0
- Testing: 100% UIS TESTED
Technical Specifications
| Parameter | Symbol | Limit | Unit | Test Conditions |
| Drain-Source Voltage | BVDSS | -100 | V | VGS=0V, ID=-250uA |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current | ID | -10 | A | TC=25C |
| Continuous Drain Current | ID | -6 | A | TC=100C |
| Pulsed Drain Current | IDM | -40 | A | |
| Avalanche Current, Single Pulsed | IAS | -13.5 | A | (L=0.5mH) |
| Avalanche Energy, Single Pulsed | EAS | 46 | mJ | TJ=25C, VDD= -50V, VG=-10V, RG=25ohm, L=0.5mH, IAS= -13.5A |
| Operating Junction Temperature | TJ | -55 to +150 | C | |
| Storage Temperature Range | Tstg | -55 to +150 | C | |
| Junction-to-Case Thermal Resistance | RJC | 3.7 | C/W | Typical |
| Zero Gate Voltage Drain Current | IDSS | -1 | uA | VGS=0V, VDS=-100V |
| Gate-to-source Leakage Current | IGSS | 100 | nA | VGS=20V, VDS=0V |
| Gate Threshold Voltage | VGS(TH) | -1.1 to -2.2 | V | VGS=VDS, ID=-250uA |
| Drain-to-source On-resistance | RDS(on) | 150 | m | VGS=-10V, ID=-5A (Typ.) |
| Drain-to-source On-resistance | RDS(on) | 170 | m | VGS=-4.5V, ID=-4A (Typ.) |
| Input Capacitance | CISS | 2577 | pF | VGS=0V, VDS =-25V, f=1MHz |
| Output Capacitance | COSS | 66 | pF | |
| Reverse Transfer Capacitance | CRSS | 52 | pF | |
| Total Gate Charge | QG(TOT) | 45 | nC | VGS=0 to -10V, VDS=-50V, ID =-10A |
| Gate-to-Source Charge | QGS | 4.5 | nC | |
| Gate-to-Drain Charge | QGD | 5.7 | nC | |
| Turn-On Delay Time | td(ON) | 22 | ns | VGS=-10V, VDD=-50V, ID=-6.5A, RG=10 |
| Rise Time | tr | 30 | ns | |
| Turn-Off Delay Time | td(OFF) | 58 | ns | |
| Fall Time | tf | 48 | ns | |
| Forward Voltage | VSD | -1.2 | V | VGS=0V, ISD=-5A |
2504101957_ElecSuper-ESE01P13K_C42434098.pdf
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