General purpose NPN transistor FUXINSEMI MMBT3904 suitable for electronic circuits in SOT23 package
Key Attributes
Model Number:
MMBT3904
Product Custom Attributes
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT3904
Package:
SOT-23
Product Description
MMBT3904 TRANSISTOR (NPN)
The MMBT3904 is an NPN transistor designed for general-purpose applications. It is complementary to the MMBT3906 and offers a range of electrical characteristics suitable for various electronic circuits. The device is available in a SOT-23 package.
Product Attributes
- Brand: FUXIN (implied by www.fuxinsemi.com)
- Type: NPN Transistor
- Complementary to: MMBT3906
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=10A, IE=0 | 60 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 40 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=10A, IC=0 | 6 | V | ||
| Collector cut-off current | ICEX | VCE=30V, VEB(off)=3V | 50 | nA | ||
| Collector cut-off current | ICBO | VCB= 60V, IE=0 | 100 | nA | ||
| Emitter cut-off current | IEBO | VEB=5V, IC=0 | 100 | nA | ||
| DC current gain | hFE(1) | VCE=1V, IC=10mA | 100 | 300 | ||
| hFE(2) | VCE=1V, IC=50mA | 60 | ||||
| hFE(3) | VCE=1V, IC=100mA | 30 | ||||
| Collector-emitter saturation voltage | VCE(sat) | IC=50mA, IB=5mA | 0.3 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=50mA, IB=5mA | 0.95 | V | ||
| Transition frequency | fT | VCE=20V,IC=10mA, f=100MHz | 300 | MHz | ||
| Delay time | td | VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA | 35 | ns | ||
| Rise time | tr | VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA | 35 | ns | ||
| Storage time | ts | VCC=3V, IC=10mA, IB1= IB2=1mA | 200 | ns | ||
| Fall time | tf | VCC=3V, IC=10mA, IB1= IB2=1mA | 50 | ns | ||
| Collector-Base Voltage | VCBO | 60 | V | |||
| Collector-Emitter Voltage | VCEO | 40 | V | |||
| Emitter-Base Voltage | VEBO | 6 | V | |||
| Collector Current | IC | 200 | mA | |||
| Collector Power Dissipation | PC | 200 | mW | |||
| Thermal Resistance From Junction To Ambient | RJA | 625 | /W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 |
2010271837_FUXINSEMI-MMBT3904_C908260.pdf
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