Power Switch MOSFET ElecSuper ESJL3139K P Channel Device with Low RDS ON and High Voltage Capability
Key Attributes
Model Number:
ESJL3139K
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
500mA
RDS(on):
580mΩ@4.5V,0.5A
Gate Threshold Voltage (Vgs(th)):
620mV@250uA
Reverse Transfer Capacitance (Crss@Vds):
15pF@10V
Input Capacitance(Ciss):
71pF@10V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
1.25nC@4.5V
Mfr. Part #:
ESJL3139K
Package:
SOT-23
Product Description
Product Overview
The ESJL3139K is a P-Channel enhancement MOS Field Effect Transistor featuring advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuits, offering a -20V BVDSS and low RDS(ON) values at various gate-source voltages. This product is Pb-free and Halogen free.
Product Attributes
- Brand: SuperMOS (ElecSuper)
- Package: SOT-23
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: ElecSuper Incorporated
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | TA=25°C | -0.5 | A | ||
| Continuous Drain Current | ID | TA=75°C | -0.4 | A | ||
| Maximum Power Dissipation | PD | 0.35 | W | |||
| Pulsed Drain Current | IDM | -2.6 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | t ≤10s | 357 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±10V | ±10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -0.35 | -0.62 | -1.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-0.5A | 580 | 850 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-2.5V, ID=-0.3A | 855 | 1200 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-1.8V, ID=-0.2A | 1350 | 2000 | mΩ | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=-10V | 71 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=-10V | 20 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=-10V | 15 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=-4.5V, VDS=-10V, ID=-0.5A | 1.25 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-4.5V, VDS=-10V, ID=-0.5A | 0.38 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-4.5V, VDS=-10V, ID=-0.5A | 0.28 | nC | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(ON) | VGS=-4.5V, VDS=-10V, RL=2.5Ω, RG=-3Ω | 4 | ns | ||
| Rise Time | tr | VGS=-4.5V, VDS=-10V, RL=2.5Ω, RG=-3Ω | 19 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-4.5V, VDS=-10V, RL=2.5Ω, RG=-3Ω | 16 | ns | ||
| Fall Time | tf | VGS=-4.5V, VDS=-10V, RL=2.5Ω, RG=-3Ω | 25 | ns | ||
| Body Diode Characteristics | ||||||
| Forward Voltage | VSD | VGS=0V, IS=-0.5A | -1.5 | V | ||
2504101957_ElecSuper-ESJL3139K_C42420843.pdf
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