NPN Silicon Transistor FUXINSEMI S9014 Ideal for Switching and Amplification Electronic Applications
Key Attributes
Model Number:
S9014
Product Custom Attributes
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
150MHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
S9014
Package:
SOT-23
Product Description
Product Overview
The S9014 is a general-purpose NPN silicon transistor designed for various electronic applications. It features high collector current, complementary pairing with the S9015, and excellent hFE linearity. This transistor is suitable for a wide range of general-purpose amplification and switching tasks.
Product Attributes
- Brand: FUXINSEMICONDUCTOR
- Type: NPN Silicon Transistor
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC= 100A, IE=0 | 50 | V | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC= 0.1mA, IB=0 | 45 | V | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | ||
| Collector Cut-off Current | ICBO | VCB=50 V , IE=0 | 0.1 | A | ||
| Collector Cut-off Current | ICEO | VCE=35V , IB=0 | 1 | A | ||
| Emitter Cut-off Current | IEBO | VEB= 3V , IC=0 | 0.1 | A | ||
| DC Current Gain | hFE | VCE=5V, IC= 1mA | 200 | 1000 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=100 mA, IB= 5mA | 0.3 | V | ||
| Base-Emitter Saturation Voltage | VBE(sat) | IC=100 mA, IB= 5mA | 1 | V | ||
| Transition Frequency | fT | VCE=5V, IC=10mA, f=30MHz | 150 | MHz | ||
| Collector Power Dissipation | PC | (Ta=25 unless otherwise noted) | 200 | mW | ||
| Thermal Resistance Junction To Ambient | RJA | (Ta=25 unless otherwise noted) | 625 | /W | ||
| Operation Junction and Storage Temperature Range | TJ,Tstg | (Ta=25 unless otherwise noted) | -55 | +150 |
2101141105_FUXINSEMI-S9014_C908255.pdf
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