Power switching MOSFET ElecSuper NCE0106R-ES featuring rugged design and high density cell technology
Key Attributes
Model Number:
NCE0106R-ES
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
120mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.7V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
650pF
Pd - Power Dissipation:
3.1W
Mfr. Part #:
NCE0106R-ES
Package:
SOT-223
Product Description
Product Overview
The NCE0106R-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switching, and charging circuits, offering high density cell design, a reliable and rugged construction, and avalanche rating. This is a standard, Pb-free product.
Product Attributes
- Brand: ElecSuper
- Product Series: SuperMOS
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.7 | 2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=4A | 120 | 150 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=3A | 130 | 180 | m | |
| CHARGES, CAPACITANCES AND GATE RESISTANCE | ||||||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 650 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 30 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 25 | pF | ||
| BODY DIODE CHARACTERISTICS | ||||||
| Forward Voltage | VSD | VGS=0V, IS=4A | 1.5 | V | ||
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | BVDSS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TA=25C | 4 | A | ||
| Continuous Drain Current | ID | TA=100C | 2.3 | A | ||
| Maximum Power Dissipation | PD | TA=25C | 3.1 | W | ||
| Pulsed Drain Current | IDM | 16 | A | |||
| Avalanche Current, Single Pulsed | IAS | a | 9 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a | 12 | mJ | ||
| Operating Junction Temperature | TJ | 150 | C | |||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||
| THERMAL CHARACTERISTICS | ||||||
| Junction-to-Ambient Thermal Resistance | RJA | Single Operation | 40 | C/W | ||
2504101957_ElecSuper-NCE0106R-ES_C22464637.pdf
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