N Channel MOSFET ElecSuper SI3134KLA TP ES with trench technology low gate charge and excellent R DS
Key Attributes
Model Number:
SI3134KLA-TP-ES
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
700mA
RDS(on):
180mΩ@4.5V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
750mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.5pF
Number:
1 N-channel
Output Capacitance(Coss):
20pF
Pd - Power Dissipation:
220mW
Input Capacitance(Ciss):
56pF
Gate Charge(Qg):
1nC@4.5V
Mfr. Part #:
SI3134KLA-TP-ES
Package:
DFN1006-3
Product Description
Product Overview
The SI3134KLA-TP-ES is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free.
Product Attributes
- Brand: SuperMOS
- Origin: ElecSuper Incorporated
- Material: Halogen free
- Certifications: UL 94V-0
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | 20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | TA=25C | 0.7 | A | ||
| TA=75C | 0.54 | A | ||||
| Maximum Power Dissipation | PD | 0.22 | W | |||
| Pulsed Drain Current | IDM | 2.8 | A | |||
| Operating Junction Temperature | TJ | 150 | C | |||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||
| Junction-to-Ambient Thermal Resistance | RJA | t 10s | 556 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=10V | 10 | uA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.35 | 0.75 | 1.1 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=0.6A | 180 | 300 | m | |
| VGS=2.5V, ID=0.5A | 260 | 350 | m | |||
| VGS=1.8V, ID=0.2A | 415 | 700 | m | |||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=10V | 56 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=10V | 20 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=10V | 2.5 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=10V, ID=0.5A | 1 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=10V, ID=0.5A | 0.28 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=10V, ID=0.5A | 0.22 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=4.5V, VDS=10V, ID=0.5A, RG=3 | 2 | ns | ||
| Rise Time | tr | VGS=4.5V, VDS=10V, ID=0.5A, RG=3 | 18.8 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=4.5V, VDS=10V, ID=0.5A, RG=3 | 10 | ns | ||
| Fall Time | tf | VGS=4.5V, VDS=10V, ID=0.5A, RG=3 | 25 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=0.7A | 1.5 | V | ||
2504101957_ElecSuper-SI3134KLA-TP-ES_C7528000.pdf
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