252 Package ElecSuper ESD516 N Channel MOSFET 30V Drain Source Voltage Suitable for DC DC Converters
Key Attributes
Model Number:
ESD516
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
65A
RDS(on):
6mΩ@4.5V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
62pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.036nF
Pd - Power Dissipation:
-
Gate Charge(Qg):
15.8nC@10V
Mfr. Part #:
ESD516
Package:
TO-252
Product Description
ESD516 SuperMOS TO-252 30V N-channel MOSFET
The ESD516 is an N-Channel enhancement MOS Field Effect Transistor designed using advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Model: ESD516
- Package: TO-252
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | TC=25C | 65 | A | ||
| Continuous Drain Current | ID | TC=75C | 50 | A | ||
| Maximum Power Dissipation | PD | TC=25C | 42 | W | ||
| Maximum Power Dissipation | PD | TC=75C | 25 | W | ||
| Pulsed Drain Current | IDM | a | 260 | A | ||
| Avalanche Current, Single Pulsed | IAS | b | 32 | A | ||
| Avalanche Energy, Single Pulsed | EAS | b | 153 | mJ | ||
| Operating Junction Temperature | TJ | 150 | C | |||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| Junction-to-Case Thermal Resistance | RJC | t 10 s | 3 | C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.75 | 2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 4.0 | 6.5 | m | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=20A | 6.0 | 8.5 | m | |
| Forward Transconductance | gFS | VDS=5.0V, ID=20A | 60 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 1036 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 444 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 62 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=15V, ID=20A | 15.8 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=15V, ID=20A | 3.3 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=15V, ID=20A | 3.6 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=15V, RG=0.75 | 5.5 | ns | ||
| Rise Time | tr | VGS=10V, VDS=15V, RG=0.75 | 3.3 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=15V, RG=1.8 | 18 | ns | ||
| Fall Time | tf | VGS=10V, VDS=15V, RG=1.8 | 4.3 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=1.0A | 0.75 | 1.5 | V | |
2504101957_ElecSuper-ESD516_C5350977.pdf
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