Power MOSFET ElecSuper IRF3205PBF-ES N Channel Enhancement Mode MOSFET Suitable for DC DC Conversion
Key Attributes
Model Number:
IRF3205PBF-ES
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
58.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7mΩ@10V;8.5mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
180pF
Number:
1 N-channel
Output Capacitance(Coss):
201pF
Input Capacitance(Ciss):
2.876nF
Pd - Power Dissipation:
58.4W
Gate Charge(Qg):
77nC@10V
Mfr. Part #:
IRF3205PBF-ES
Package:
TO-252
Product Description
Product Overview
The IRF3205PBF-ES is an N-Channel enhancement mode MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and features a high-density cell design for low RDS(on), reliability, and avalanche rating.
Product Attributes
- Brand: ElecSuper
- Origin: Not specified
- Material: Halogen free
- Color: Not specified
- Certifications: UL 94V-0
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=250uA | 60 | V | ||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TC=25�b0;C | 58.6 | A | ||
| Continuous Drain Current | ID | TC=100�b0;C | 37.0 | A | ||
| Maximum Power Dissipation | PD | 58.4 | W | |||
| Pulsed Drain Current | IDM | 234.4 | A | |||
| Single Pulsed Avalanche Current | IAS | EAS condition : TJ=25�b0;C,VDD=30V,VG=10V,L=0.5mH,Rg=25�b0;℆ | 22 | A | ||
| Single Pulsed Avalanche Energy | EAS | EAS condition : TJ=25�b0;C,VDD=30V,VG=10V,L=0.5mH,Rg=25�b0;℆ | 121 | mJ | ||
| Operating Junction Temperature | TJ | -55 | 150 | �b0;C | ||
| Lead Temperature | TL | 260 | �b0;C | |||
| Storage Temperature Range | Tstg | -55 | 150 | �b0;C | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.2 | 1.6 | 2.2 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=20A | 7 | 10 | m℆ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=10A | 8.5 | 14 | m℆ | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=25V | 2876 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=25V | 201 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=25V | 180 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=0 to 10V, VDS=30V, ID=30A | 77 | nC | ||
| Gate-to-Source Charge | QGS | VGS=0 to 10V, VDS=30V, ID=30A | 14 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=0 to 10V, VDS=30V, ID=30A | 15 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=30V, ID=30A, RG=1.8℆ | 13 | ns | ||
| Rise Time | tr | VGS=10V, VDS=30V, ID=30A, RG=1.8℆ | 77 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=30V, ID=30A, RG=1.8℆ | 50 | ns | ||
| Fall Time | tf | VGS=10V, VDS=30V, ID=30A, RG=1.8℆ | 106 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=30A | 1.2 | V | ||
2504101957_ElecSuper-IRF3205PBF-ES_C21713863.pdf
Related Products
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Planar Die Zener Diode Series Including XZT BZT52C18S Suitable for Medium Current Applications
Product OverviewThe BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in lead-free versions. These diodes offer a wide range of Zener voltages ...
Silicon Bidirectional Trigger Diode YFW LLDB3 for Thyristor Phase Control Circuits Lamp Dimming and Speed Control
Product OverviewThe LL-34 LLDB3/LLDB4 are Silicon Bidirectional Trigger Diodes designed for thyristor phase control circuits. They are suitable for applications such as lamp-dimming, universal-motor speed controls, and heat controls.Product AttributesBrand: GuangDongYoufengMicroelectronicsCo,Ltd...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
