Electronic Component SOT23 Package Featuring FUXINSEMI MMBTA92 High Collector Current Transistor
Key Attributes
Model Number:
MMBTA92
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
250nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
50MHz
Type:
PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
300V
Operating Temperature:
-
Mfr. Part #:
MMBTA92
Package:
SOT-23
Product Description
Product Overview
The MMBTA92 is a high collector current transistor, complementary to the MMBTA42, designed for SOT-23 packaging. It offers robust performance with a maximum collector current of -0.2A and a collector-emitter voltage of -300V, making it suitable for various electronic applications.
Product Attributes
- Brand: Fuxinsemi
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Max | Unit |
| Collector-Base Breakdown Voltage | V(BR)CBO | IC= -100A, IE=0 | -300 | V | |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC= -1mA, IB=0 | -300 | V | |
| Emitter-Base Breakdown Voltage | V(BR)EBO | IE= -100A, IC=0 | -5 | V | |
| Collector Cut-off Current | ICBO | VCB=-200V, IE=0 | -0.25 | A | |
| Emitter Cut-off Current | IEBO | VEB= -5V, IC=0 | -0.1 | A | |
| DC Current Gain | hFE(1) | VCE= -10V, IC= -1mA | 60 | ||
| hFE(2) | VCE= -10V, IC=-10mA | 100 | 200 | ||
| hFE(3) | VCE= -10V, IC=-30mA | 60 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=-20mA, IB= -2mA | -0.2 | V | |
| Base-Emitter Saturation Voltage | VBE(sat) | IC= -20mA, IB= -2mA | -0.9 | V | |
| Transition Frequency | fT | VCE=-20V, IC= -10mA, f=30MHz | 50 | MHz | |
| Collector Current | IC | -0.2 | A | ||
| Collector Power Dissipation | PC | Ta=25 | 300 | mW | |
| Thermal Resistance Junction To Ambient | RJA | 417 | /W | ||
| Junction Temperature | Tj | 150 | |||
| Storage Temperature | Tstg | -55 | +150 |
2409272301_FUXINSEMI-MMBTA92_C908263.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
