Low Gate Charge MOSFET ElecSuper ES2310 Ideal for Power Switching and DC DC Converter Applications
Key Attributes
Model Number:
ES2310
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3.2A
RDS(on):
58mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.35V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
24pF
Number:
1 N-channel
Output Capacitance(Coss):
29pF
Input Capacitance(Ciss):
400pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
8.8nC@10V
Mfr. Part #:
ES2310
Package:
SOT-23
Product Description
Product Overview
The ES2310 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper
- Model: ES2310
- Package: SOT-23
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | 3.2 | A | ||
| Continuous Drain Current | ID | TA=75°C | 2.4 | A | ||
| Maximum Power Dissipation | PD | TA=25°C | 1.4 | W | ||
| Maximum Power Dissipation | PD | TA=75°C | 0.84 | W | ||
| Pulsed Drain Current | IDM | tp=10μs, Duty Cycle=1% | 12.8 | A | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | a: Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper, t ≤ 10 s | 75 | 90 | °C/W | |
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1 | μA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 0.9 | 1.35 | 2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=3A | 58 | 90 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=2A | 69 | 110 | mΩ | |
| Forward Transconductance | gFS | VDS=5.0V, ID=3A | 6.5 | 15 | S | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=30V | 400 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=30V | 29 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=30V | 24 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=10V, VDS=30V, ID=3A | 8.8 | nC | ||
| Gate-to-Source Charge | QGS | VGS=10V, VDS=30V, ID=3A | 1 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=10V, VDS=30V, ID=3A | 2.5 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=30V, ID=3A, RG=2.3Ω | 4.5 | ns | ||
| Rise Time | tr | VGS=10V, VDS=30V, ID=3A, RG=2.3Ω | 10 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=30V, ID=3A, RG=2.3Ω | 12.5 | ns | ||
| Fall Time | tf | VGS=10V, VDS=30V, ID=3A, RG=2.3Ω | 1.5 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=1.0A | 0.45 | 1.5 | V | |
2504101957_ElecSuper-ES2310_C5350979.pdf
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