High Cell Density N Channel MOSFET FETek FKBA3052 Designed for Fast Switching and Loss Applications
Key Attributes
Model Number:
FKBA3052
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
52A
RDS(on):
6.3mΩ@10V,20A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
41pF@15V
Number:
-
Input Capacitance(Ciss):
814pF@15V
Pd - Power Dissipation:
27W
Gate Charge(Qg):
-
Mfr. Part #:
FKBA3052
Package:
PRPAK5X6
Product Description
Product Overview
The FKBA3052 is a high cell density Trench MOSFET designed for DC/DC converters. It offers excellent RDS(ON) and low gate charge, meeting RoHS and Green Product requirements with 100% EAS guaranteed for reliable performance.
Product Attributes
- Brand: FETek Technology Corp.
- Product Line: FKBA3052
- Type: N-Ch Fast Switching MOSFETs
- Certifications: RoHS, Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=20A | --- | 5 | 6.3 | m |
| VGS=4.5V , ID=15A | --- | 6.9 | 9 | m | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.2 | --- | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=20A | --- | 67 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.7 | --- | |
| Qg | Total Gate Charge | VDS=15V , VGS=4.5V , ID=15A | --- | 8 | --- | nC |
| VDS=15V , VGS=10V , RG=3.3, ID=15A, Td(on) | --- | 7.1 | --- | ns | ||
| VDS=15V , VGS=10V , RG=3.3, ID=15A, Tr | --- | 40 | --- | ns | ||
| Qgs | Gate-Source Charge | VDS=15V , VGS=10V , RG=3.3, ID=15A, Td(off) | --- | 15 | --- | ns |
| VDS=15V , VGS=10V , RG=3.3, ID=15A, Tf | --- | 6 | --- | ns | ||
| VDS=15V , VGS=10V , RG=3.3, ID=15A, Qg | --- | 8 | --- | nC | ||
| Qgd | Gate-Drain Charge | VDS=15V , VGS=10V , RG=3.3, ID=15A, Qgs | --- | 2.4 | --- | nC |
| VDS=15V , VGS=10V , RG=3.3, ID=15A, Qgd | --- | 3.2 | --- | nC | ||
| VDS=15V , VGS=10V , RG=3.3, ID=15A, Qrr | --- | 25 | --- | nC | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 814 | --- | pF |
| VDS=15V , VGS=0V , f=1MHz | --- | 814 | --- | pF | ||
| Coss | Output Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 498 | --- | pF |
| Crss | Reverse Transfer Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 41 | --- | pF |
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | --- | 30 | A |
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | --- | --- | 1 | V |
| trr | Reverse Recovery Time | IF=20A , di/dt=100A/s , TJ=25 | --- | 15 | --- | nS |
| Qrr | Reverse Recovery Charge | IF=20A , di/dt=100A/s , TJ=25 | --- | 25 | --- | nC |
2411220015_FETek-FKBA3052_C5361877.pdf
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