Dual N Channel 60V MOSFETs FETek FKBA6214 with Fast Switching and Full Function Reliability Approval
Key Attributes
Model Number:
FKBA6214
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
17A
RDS(on):
42mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
46pF
Number:
2 N-Channel
Output Capacitance(Coss):
65pF
Input Capacitance(Ciss):
1.027nF
Pd - Power Dissipation:
31.3W
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
FKBA6214
Package:
PRPAK(5x6)
Product Description
Product Overview
The FKBA6214 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Brand: FETek Technology Corp.
- Product Name: FKBA6214
- Type: Dual N-Ch 60V Fast Switching MOSFETs
- Certifications: RoHS, Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| VDS (Drain-Source Voltage) | 60 | V | |||
| VGS (Gate-Source Voltage) | ±20 | V | |||
| ID (Continuous Drain Current) @ TC=25, VGS @ 10V | 17 | A | |||
| ID (Continuous Drain Current) @ TC=100, VGS @ 10V | 10.9 | A | |||
| ID (Continuous Drain Current) @ TA=25, VGS @ 10V | 4.9 | A | |||
| ID (Continuous Drain Current) @ TA=70, VGS @ 10V | 2.3 | A | |||
| IDM (Pulsed Drain Current) | 40 | A | |||
| EAS (Single Pulse Avalanche Energy) | 22 | mJ | |||
| IAS (Avalanche Current) | 21 | A | |||
| PD (Total Power Dissipation) @ TC=25 | 31.3 | W | |||
| PD (Total Power Dissipation) @ TA=25 | 2 | W | |||
| TSTG (Storage Temperature Range) | -55 | 150 | |||
| TJ (Operating Junction Temperature Range) | -55 | 150 | |||
| RJA (Thermal Resistance Junction-ambient) | 62 | /W | |||
| RJC (Thermal Resistance Junction-Case) | 5 | /W | |||
| BVDSS (Drain-Source Breakdown Voltage) | VGS=0V , ID=250uA | 60 | V | ||
| RDS(ON) (Static Drain-Source On-Resistance) | VGS=10V , ID=15A | 35 | 42 | m | |
| RDS(ON) (Static Drain-Source On-Resistance) | VGS=4.5V , ID=7A | 40 | 52 | m | |
| VGS(th) (Gate Threshold Voltage) | VGS=VDS , ID =250uA | 1.0 | 1.7 | 2.5 | V |
| IDSS (Drain-Source Leakage Current) | VDS=48V , VGS=0V , TJ=25 | 1 | uA | ||
| IDSS (Drain-Source Leakage Current) | VDS=48V , VGS=0V , TJ=55 | 5 | uA | ||
| IGSS (Gate-Source Leakage Current) | VGS=±20V , VDS=0V | ±100 | nA | ||
| gfs (Forward Transconductance) | VDS=5V , ID=15A | 25.3 | S | ||
| Qg (Total Gate Charge) | VDS=48V , VGS=10V , ID=15A | 19 | nC | ||
| Qgs (Gate-Source Charge) | 2.5 | nC | |||
| Qgd (Gate-Drain Charge) | 5 | nC | |||
| Td(on) (Turn-On Delay Time) | VDD=30V , VGS=10V , RG=3.3 , ID=15A | 2.8 | ns | ||
| Tr (Rise Time) | 16.6 | ns | |||
| Td(off) (Turn-Off Delay Time) | 21.2 | ns | |||
| Tf (Fall Time) | 5.6 | ns | |||
| Ciss (Input Capacitance) | VDS=15V , VGS=0V , f=1MHz | 1027 | pF | ||
| Coss (Output Capacitance) | 65 | pF | |||
| Crss (Reverse Transfer Capacitance) | 46 | pF | |||
| IS (Continuous Source Current) | VG=VD=0V , Force Current | 17 | A | ||
| VSD (Diode Forward Voltage) | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
| trr (Reverse Recovery Time) | IF=15A , dI/dt=100A/s , TJ=25 | 12.2 | nS | ||
| Qrr (Reverse Recovery Charge) | 7.3 | nC |
2411220306_FETek-FKBA6214_C3015507.pdf
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