Low Gate Charge N Channel MOSFET FETek FKBB3004 Suitable for Fast Switching and Power Conversion
Key Attributes
Model Number:
FKBB3004
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
46A
Operating Temperature -:
-55℃~+150℃
RDS(on):
15mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
131pF
Number:
1 N-channel
Output Capacitance(Coss):
163pF
Input Capacitance(Ciss):
1.317nF
Pd - Power Dissipation:
29W
Gate Charge(Qg):
12.8nC@4.5V
Mfr. Part #:
FKBB3004
Package:
PRPAK(3x3)
Product Description
Product Overview
The FKBB3004 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements, with 100% EAS guaranteed for reliable performance.
Product Attributes
- Brand: FETek Technology Corp.
- Product Type: N-Ch 30V Fast Switching MOSFETs
- Certifications: RoHS, Green Product
- Special Features: 100% EAS Guaranteed, Super Low Gate Charge, Excellent CdV/dt effect decline, Advanced high cell density Trench technology
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=15A | --- | --- | 9 | m |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=10A | --- | --- | 15 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | --- | 2.5 | V |
| IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| Qg | Total Gate Charge | VDS=20V , VGS=4.5V , ID=12A | --- | 12.8 | --- | nC |
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 1317 | --- | pF |
| Coss | Output Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 163 | --- | pF |
| Crss | Reverse Transfer Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 131 | --- | pF |
| ID | Continuous Drain Current | TC=25, VGS @ 10V | --- | --- | 46 | A |
| ID | Continuous Drain Current | TC=100, VGS @ 10V | --- | --- | 29 | A |
| ID | Continuous Drain Current | TA=25, VGS @ 10V | --- | --- | 11 | A |
| ID | Continuous Drain Current | TA=70, VGS @ 10V | --- | --- | 9 | A |
| IDM | Pulsed Drain Current | --- | --- | --- | 92 | A |
| PD | Total Power Dissipation | TC=25 | --- | --- | 29 | W |
| PD | Total Power Dissipation | TA=25 | --- | --- | 1.67 | W |
| EAS | Single Pulse Avalanche Energy | --- | --- | --- | 57.8 | mJ |
| IAS | Avalanche Current | --- | --- | --- | 34 | A |
| RJA | Thermal Resistance Junction-ambient | --- | --- | --- | 75 | /W |
| RJC | Thermal Resistance Junction-Case | --- | --- | --- | 4.32 | /W |
| TSTG | Storage Temperature Range | --- | -55 | --- | 150 | |
| TJ | Operating Junction Temperature Range | --- | -55 | --- | 150 |
2411220120_FETek-FKBB3004_C2758593.pdf
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