ElecSuper SI4435DY ES MOSFET optimized for DC DC conversion power switching and low leakage current
Key Attributes
Model Number:
SI4435DY-ES
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
10.5A
RDS(on):
13.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
145pF
Number:
1 P-Channel
Input Capacitance(Ciss):
1.23nF
Output Capacitance(Coss):
160pF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
26.4nC@10V
Mfr. Part #:
SI4435DY-ES
Package:
SOP-8
Product Description
Product Overview
The SI4435DY-ES is a P-Channel enhancement mode MOSFET featuring advanced trench technology for excellent RDS(ON) and low gate charge. It is designed for applications such as DC-DC conversion, power switching, and charging circuits, offering fast switching, high-density cell design, and a reliable, rugged construction. This device is avalanche rated and has low leakage current.
Product Attributes
- Brand: ElecSuper
- Model: SI4435DY-ES
- Package: SOP8
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: China (implied by copyright and website)
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -30 | V | |||
| Gate-Source Voltage | VGS | ±25 | V | |||
| Continuous Drain Current | ID | TA=25°C | -10.5 | A | ||
| Continuous Drain Current | ID | TA=70°C | -8.0 | A | ||
| Maximum Power Dissipation | PD | TA=25°C | 3.1 | W | ||
| Maximum Power Dissipation | PD | TA=70°C | 2.0 | W | ||
| Pulsed Drain Current | IDM | -80 | A | |||
| Avalanche Current, Single Pulsed | IAS | a | -18.5 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a | 51 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation | 32 | 40 | °°C/W | |
| Junction-to-Lead Thermal Resistance | RθJL | Single Operation | 3.2 | 4 | °°C/W | |
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-30V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=±25V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -1.5 | -2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-10A | 13.5 | 21 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-7A | 18.5 | 27 | mΩ | |
| Input Capacitance | CISS | VGS=0V, VDS =-15V, f=1MHz | 1230 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-15V, f=1MHz | 160 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-15V, f=1MHz | 145 | pF | ||
| Gate Resistance | Rg | f=1MHz | 10 | Ω | ||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V, ID =-10A | 26.4 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-15V, ID =-10A | 6 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-15V, ID =-10A | 4.3 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 18 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 22 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 55 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω | 42 | ns | ||
| Forward Voltage | VSD | VGS=0V, ISD=-1.0A | -0.75 | -1 | V | |
2504101957_ElecSuper-SI4435DY-ES_C22363746.pdf
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