N Channel Trench Power MOSFET FM 30H10K with Low Gate Charge and High Current Handling Capability
Key Attributes
Model Number:
30H10K
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+175℃
RDS(on):
7mΩ@5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
300pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
88W
Input Capacitance(Ciss):
2.6nF@15V
Gate Charge(Qg):
58nC@10V
Mfr. Part #:
30H10K
Package:
TO-252
Product Description
Product Overview
The 30H10K is an N-Channel Trench Power MOSFET from SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. It utilizes advanced trench technology to achieve excellent RDS(ON), low gate charge, and operation with gate voltages as low as 5V, making it suitable for a wide range of applications including PWM applications, load switches, and power management. It offers high power and current handling capability and is 100% UIS and Vds tested.
Product Attributes
- Brand: SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
- Product Code: 30H10K
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | VGS=0V | 30 | V | ||
| Gate-Source Voltage | VGS | VDS=0V | ±20 | V | ||
| Drain Current-Continuous | ID | Tc=25 | 100 | A | ||
| Drain Current-Continuous | ID | Tc=100 | 70 | A | ||
| Drain Current-Continuous@ Current-Pulsed | IDM | (Note 1) | 400 | A | ||
| Maximum Power Dissipation | PD | Tc=25 | 88 | W | ||
| Maximum Power Dissipation | PD | Tc=100 | 44 | W | ||
| Avalanche energy | EAS | (Note 2) | 320 | mJ | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | |||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case | RθJC | - | 1.7 | /W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250μA | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | 1 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS=±20V,VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250μA | 1 | 1.5 | 2.5 | V |
| Forward Transconductance | gFS | VDS=5V,ID=15A | 30 | S | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=20A | 3.6 | 4.2 | mΩ | |
| Drain-Source On-State Resistance | RDS(ON) | VGS=5V, ID=15A | 4.6 | 7 | mΩ | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=15V,VGS= 0V, f=1.0MHz | 2600 | pF | ||
| Output Capacitance | Coss | VDS=15V,VGS= 0V, f=1.0MHz | 412 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS= 0V, f=1.0MHz | 300 | pF | ||
| Gate resistance | Rg | VGS=0V, VDS=0V,f=1.0MHz | 3.3 | Ω | ||
| Switching Times | ||||||
| Turn-on Delay Time | td(on) | VGS=10V, VDS=15V, RL=0.75Ω,RGEN= 3Ω | 13 | nS | ||
| Turn-on Rise Time | tr | VGS=10V, VDS=15V, RL=0.75Ω,RGEN= 3Ω | 16 | nS | ||
| Turn-Off Delay Time | td(off) | VGS=10V, VDS=15V, RL=0.75Ω,RGEN= 3Ω | 40 | nS | ||
| Turn-Off Fall Time | tf | VGS=10V, VDS=15V, RL=0.75Ω,RGEN= 3Ω | 14 | nS | ||
| Gate Charge | ||||||
| Total Gate Charge | Qg | VGS=10V, VDS=15V, ID=14A | 58 | nC | ||
| Gate-Source Charge | Qgs | VGS=10V, VDS=15V, ID=14A | 7 | nC | ||
| Gate-Drain Charge | Qgd | VGS=10V, VDS=15V, ID=14A | 18 | nC | ||
| Source-Drain Diode Characteristics | ||||||
| Source-Drain Current(Body Diode) | ISD | 100 | A | |||
| Forward on Voltage | VSD | VGS=0V,IS=20A (Note 1) | 1.2 | V | ||
2410010301_FM-30H10K_C2932013.pdf
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