P Channel Trench Power MOSFET FM 3407 H Offering Low RDS ON and Heat Dissipation for Power Circuits
Key Attributes
Model Number:
3407/H
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
RDS(on):
48mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
66pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
522pF@15V
Pd - Power Dissipation:
1.36W
Gate Charge(Qg):
6.1nC@10V
Mfr. Part #:
3407/H
Package:
SOT-23
Product Description
Product Overview
The 3407/H is a P-Channel Trench Power MOSFET from Fine Made Microelectronics Group Co., Ltd. It utilizes advanced trench technology to achieve excellent RDS(ON) and low gate charge, making it suitable for applications requiring efficient power switching. Key features include extremely low RDS(ON), good stability and uniformity, 100% avalanche testing, and an excellent package for heat dissipation. This device is ideal for use in UPS, power switching, and general-purpose applications.
Product Attributes
- Brand: Fine Made Microelectronics Group Co., Ltd. ()
- Model: 3407/H
- File Number: S&CIC2006
- Website: www.superchip.cn
- Package: SOT-23
- Technology: P-Channel Trench Power MOSFET
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | |||||
| VDS (Drain-Source Voltage) | -30 | V | |||
| ID (Drain Current - Continuous, TC= 25C) | -4 | A | |||
| ID (Drain Current - Continuous, TC= 100C) | -2.5* | A | |||
| IDM (Drain Current - Pulsed) | (Note 1) | -16* | A | ||
| VGS (Gate-Source Voltage) | 20 | V | |||
| EAS (Single Pulsed Avalanche Energy) | (Note 2) | 11 | mJ | ||
| PD (Power Dissipation, TC = 25C) | 1.36 | W | |||
| Derate above 25C | 0.31 | W/C | |||
| Tj ,Tstg (Operating and Storage Temperature Range) | -55 | +150 | C | ||
| RJC (Thermal Resistance, Junction-to-Case) | 73 | C/W | |||
| Electrical Characteristics | |||||
| V(BR)DSS (Drain-Source Breakdown Voltage) | VGS=0V,ID= -250A | -30 | V | ||
| IDSS (Zero Gate Voltage Drain Current) | VDS = -30V, VGS = 0V | -1 | A | ||
| IGSSF (Gate Leakage Current, Forward) | VDS =0V, VGS =12V | 100 | nA | ||
| IGSSR (Gate Leakage Current, Reverse) | VDS =0V, VGS =-12V | -100 | nA | ||
| VGS(th) (Gate Threshold Voltage) | VDS= VGS, ID= -250A | -1 | -1.5 | -2.0 | V |
| RDS(on) (Static Drain-Source on-Resistance) | VGS =-10V, ID =-4.0A | 39 | 48 | m | |
| RDS(on) (Static Drain-Source on-Resistance) | VGS =-4.5V, ID =-3.0A | 54 | 65 | m | |
| gFS (Forward Transconductance) | VDS =-5V, ID = -4.0A (Note 2) | 20 | S | ||
| Ciss (Input Capacitance) | VDS = -15V, VGS =0V, f = 1.0MHz | 522 | pF | ||
| Coss (Output Capacitance) | 88 | pF | |||
| Crss (Reverse Transfer Capacitance) | 66 | pF | |||
| Qg (Total Gate Charge) | VDS= -15V, ID = -4.2A, VGS = -10V (Note 3, 4) | 6.1 | nC | ||
| Qgs (Gate-Source Charge) | 0.9 | nC | |||
| Qgd (Gate-Drain(Miller) Charge) | 1.2 | nC | |||
| td(on) (Turn-on Delay Time) | VDD = -15V, ID =1A, VGS =-10V, RG=2.5 (Note 3, 4) | 12.6 | ns | ||
| tr (Turn-on Rise Time) | 55 | ns | |||
| td(off) (Turn-off Delay Time) | 17 | ns | |||
| tf (Turn-off Fall Time) | 9 | ns | |||
| Drain-Source Diode Characteristics and MaximumRatings | |||||
| IS (Maximum Continuous Drain to Source Diode Forward Current) | -4.0 | A | |||
| ISM (Maximum Pulsed Drain-Source Diode Forward Current) | -10 | A | |||
| VSD (Drain to Source Diode Forward Voltage) | VGS = 0V, IS = -4.0A | -1.2 | V | ||
2410121830_FM-3407-H_C2932006.pdf
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