Power Management Solutions Featuring FM 2301M P Channel Trench MOSFET with High Current Capability
Key Attributes
Model Number:
2301M
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
RDS(on):
220mΩ@2.5V,0.5A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
43pF
Input Capacitance(Ciss):
348pF
Pd - Power Dissipation:
840mW
Output Capacitance(Coss):
69pF
Gate Charge(Qg):
3.8nC@4.5V
Mfr. Part #:
2301M
Package:
SOT-23
Product Description
Product Overview
The 2301M is a P-Channel Trench Power MOSFET designed for high power and current handling capabilities. It features low on-resistance at various gate-source voltages and is suitable for applications such as PWM, load switching, and power management. This lead-free product is available in a SOT-23 surface mount package.
Product Attributes
- Brand: Superchip
- Origin: China (www.superchip.cn)
- Certification: Lead Free Product is Acquired
Technical Specifications
| Symbol | Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | -20 | - | - | V | |
| VGSS | Gate-Source Voltage | - | ±12 | - | V | |
| ID | Continuous Drain Current | TC = 25 | - | - | -2.3 | A |
| TC = 100 | - | - | -1.4 | A | ||
| PD | Power Dissipation | TA= 25 | - | - | 0.84 | W |
| RJA | Thermal Resistance, Junction to Ambient | - | 168 | - | /W | |
| TJ, TSTG | Operating and Storage Temperature Range | -55 | - | +150 | ||
| Electrical Characteristics | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID= -250µA | -20 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = -20V, VGS = 0V | - | - | -1 | µA |
| IGSS | Gate to Body Leakage Current | VDS =0V, VGS = ±12V | - | - | ±100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS= VGS, ID= -250µA | -0.4 | -0.65 | -1.0 | V |
| RDS(on) | Static Drain-Source on-Resistance | VGS =-4.5V, ID =-1A | - | 128 | 148 | mΩ |
| VGS =-2.5V, ID =-0.5A | - | 168 | 220 | mΩ | ||
| gFS | Forward Transconductance | VDS =-5V, ID = -1.5A | 3.2 | - | - | S |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = -10V, VGS = 0V, f = 1.0MHz | - | 348 | - | pF |
| Coss | Output Capacitance | - | 69 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 43 | - | pF | |
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS = -10V, ID = -2.5A, VGS = -4.5V | - | 3.8 | - | nC |
| Qgs | Gate-Source Charge | - | 0.69 | - | nC | |
| Qgd | Gate-Drain(“Miller”) Charge | - | 0.94 | - | nC | |
| Switching Characteristics | ||||||
| td(on) | Turn-on Delay Time | VDD = -10V, RL=5Ω, RGEN=3Ω,VGS=-4.5V | - | 17 | - | ns |
| tr | Turn-on Rise Time | - | 6.4 | - | ns | |
| td(off) | Turn-off Delay Time | - | 25.2 | - | ns | |
| tf | Turn-off Fall Time | - | 8.4 | - | ns | |
| Drain-Source Diode Characteristics | ||||||
| IS | Maximum Continuous Drain to Source Diode Forward Current | - | - | -2.3 | A | |
| VSD | Drain to Source Diode Forward Voltage | VGS = 0V, IS = -2.0A | - | - | -1.2 | V |
2410010301_FM-2301M_C19630733.pdf
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