Low On Resistance N Channel MOSFET FM 8205S P 20V Suitable for High Current and Battery Applications
Key Attributes
Model Number:
.8205S/P
Product Custom Attributes
Configuration:
Common Drain
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
9A
RDS(on):
34mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
72pF
Number:
2 N-Channel
Input Capacitance(Ciss):
511pF
Pd - Power Dissipation:
1.68W
Gate Charge(Qg):
8.02nC
Mfr. Part #:
.8205S/P
Package:
SOT-23-6
Product Description
Product Overview
The .8205S/P is a 20V N-Channel Enhancement-Mode MOSFET from Fine Made Microelectronics Group Co., Ltd. It features a proprietary advanced planar technology, high-density ultra-low resistance design, and is suitable for high-power, high-current applications and ideal for lithium battery applications. The device comes in a SOT23-6 package.
Product Attributes
- Brand: Fine Made Microelectronics Group Co., Ltd.
- Product Number: .8205S/P
- Document Number: S&CIC2050
- Version: 1.0
- Website: www.superchip.cn
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typical | Max | Unit |
| On-Resistance | RDS(ON) | Vgs@2.5V, Ids@3.0A | 29.0 | 34.0 | m | |
| RDS(ON) | Vgs@4.0V, Ids@4.0A | 25.0 | 32.0 | m | ||
| RDS(ON) | Vgs@4.5V, Ids@4.5A | 22.0 | 27.0 | m | ||
| RDS(ON) | Vgs = 2.5V,ID = 3.5A | 29.0 | 34.0 | V | ||
| RDS(ON) | Vgs = 4.0V,ID = 4.5A | 25.0 | 32.0 | V | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250uA | 20 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250uA | 0.45 | 1.4 | V | |
| Drain Current | ID | 6 | A | |||
| Drain Pulse Current | IDM | 18 | A | |||
| Maximum Power Dissipation | PD | TA = 25 | 1.68 | W | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | |||
| Thermal Resistance (PCB Mounted) | RJA | 62.8 | /W | |||
| Total Gate Charge | Qg | VDS = 10V,ID = 6A | 6.18 | 8.02 | nC | |
| Gate-Source Charge | Qgs | VGS = 4.5V | 1.59 | 2.00 | nC | |
| Gate-Drain Charge | Qgd | 1.21 | 1.68 | nC | ||
| Input Capacitance | Ciss | VDS = 8V, VGS = 0V f=1.0MHz | 511 | pF | ||
| Output Capacitance | Coss | 98 | pF | |||
| Reverse Transfer Capacitance | Crss | 72 | pF | |||
| Diode Continuous Forward Current | IS | 1.7 | A | |||
| Diode Forward Voltage | VSD | IS = 1.7A, VGS = 0V | 1.2 | V |
2410121256_FM--8205S-P_C2887492.pdf
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