power switching FM 40H13A N channel Trench Power MOSFET with low on resistance and high reliability
Key Attributes
Model Number:
40H13A
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
654pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
6.88nF@25V
Pd - Power Dissipation:
205W
Gate Charge(Qg):
148nC@10V
Mfr. Part #:
40H13A
Package:
TO-220
Product Description
Product Overview
The 40H13A is an N-channel Trench Power MOSFET designed for high current switching applications. It features ultra-low on-resistance and high UIS (Unity Avalanche Energy) capability, making it suitable for applications requiring efficient and robust switching performance. The device is ideal for hard switched and high frequency circuits, as well as uninterruptible power supplies.
Product Attributes
- Brand: (FINE MADE MICROELECTRONICS GROUP CO., LTD.)
- Product Code: 40H13A
- File Number: S&CIC2081
- Version: 1.0
- Website: www.superchip.cn
- Package: TO-220
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage (VGS=0V) | 40 | V | |||
| VGS | Gate-Source Voltage (VDS=0V) | 20 | V | |||
| ID (DC) | Drain Current (DC) at Tc=25 | 130 | A | |||
| ID (DC) | Drain Current (DC) at Tc=100 | 80 | A | |||
| IDM (pluse) | Drain Current-Continuous@ Current-Pulsed (Note 1) | 400 | A | |||
| dv/dt | Peak Diode Recovery Voltage | 1.82 | V/ns | |||
| PD | Maximum Power Dissipation(Tc=25) | 205 | W | |||
| Derating Factor | 1.58 | W/ | ||||
| EAS | Single Pulse Avalanche Energy (Note 2) | TJ=25,IAS=65A,VG=10V, RG=25 | 1056 | mJ | ||
| TJ,TSTG | Operating Junction and Storage Temperature Range | -55 | 175 | |||
| Thermal Characteristic | ||||||
| RJC | Thermal Resistance,Junction-to-Case | 0.68 | /W | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V ID=250A | 40 | V | ||
| IDSS | Zero Gate Voltage Drain Current(Tc=25) | VDS=40V,VGS=0V | 1 | A | ||
| IDSS | Zero Gate Voltage Drain Current(Tc=125) | VDS=40V,VGS=0V | 1 | A | ||
| IGSS | Gate-Body Leakage Current | VGS=20V,VDS=0V | 100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VDS=VGS,ID=250A | 1.1 | 1.6 | 2.5 | V |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=40A | 2.8 | 3.5 | m | |
| Dynamic Characteristics | ||||||
| gFS | Forward Transconductance | VDS=10V,ID=40A | 45 | S | ||
| Ciss | Input Capacitance | VDS=25V,VGS=0V f=1.0MHz | 6880 | PF | ||
| Coss | Output Capacitance | VDS=25V,VGS=0V f=1.0MHz | 956 | PF | ||
| Crss | Reverse Transfer Capacitance | VDS=25V,VGS=0V f=1.0MHz | 654 | PF | ||
| Qg | Total Gate Charge | VDS=32V,ID=75A VGS=10V | 148 | nC | ||
| Qgs | Gate-Source Charge | VDS=32V,ID=75A VGS=10V | 42 | nC | ||
| Qgd | Gate-Drain Charge | VDS=32V,ID=75A VGS=10V | 58 | nC | ||
| Switching Times | ||||||
| td(on) | Turn-on Delay Time | VDD=20V,ID=75A VGS=10V,RG=3.0 | 44 | nS | ||
| tr | Turn-on Rise Time | VDD=20V,ID=75A VGS=10V,RG=3.0 | 52 | nS | ||
| td(off) | Turn-Off Delay Time | VDD=20V,ID=75A VGS=10V,RG=3.0 | 68 | nS | ||
| tf | Turn-Off Fall Time | VDD=20V,ID=75A VGS=10V,RG=3.0 | 24 | nS | ||
| Source-Drain Diode Characteristics | ||||||
| ISD | Source-Drain Current(Body Diode) | 130 | A | |||
| ISDM | Pulsed Source-Drain Current(Body Diode) | 400 | A | |||
| VSD | Forward On Voltage(Note 1) | TJ=25,ISD=40A,VGS=0V | 0.91 | 1.2 | V | |
| trr | Reverse Recovery Time(Note 1) | TJ=25,IF=40A di/dt=100A/s | 26 | nS | ||
| Qrr | Reverse Recovery Charge(Note 1) | TJ=25,IF=40A di/dt=100A/s | 22 | nC | ||
| ton | Forward Turn-on Time | Intrinsics negligible | ||||
2411121101_FM-40H13A_C2932019.pdf
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