Low gate charge N Channel MOSFET ElecSuper 5N10 ES designed for DC DC conversion and power switching
Key Attributes
Model Number:
5N10-ES
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.65V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.4pF
Number:
1 N-channel
Output Capacitance(Coss):
29pF
Input Capacitance(Ciss):
206pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
4.2nC@10V
Mfr. Part #:
5N10-ES
Package:
SOT-23
Product Description
Product Overview
The 5N10-ES is an N-Channel enhancement mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switching, and charging circuits. This standard product is Pb-free and Halogen-free.
Product Attributes
- Brand: ElecSuper Incorporated
- Model: 5N10-ES
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=250uA | 100 | V | ||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | 3 | A | ||
| Continuous Drain Current | ID | TA=100°C | 2.2 | A | ||
| Pulsed Drain Current | IDM | 12 | A | |||
| Maximum Power Dissipation | PD | TA=25°C | 3.1 | W | ||
| Operating Junction Temperature | TJ | -55 | 150 | °C | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | µA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.65 | 2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=3A | 95 | 130 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=1A | 135 | 190 | mΩ | |
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=50V | 200 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=50V | 30 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=50V | 3 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=0 to 10V, VDS=50V, ID=3A | 4 | nC | ||
| Gate-to-Source Charge | QGS | VGS=0 to 10V, VDS=50V, ID=3A | 0.9 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=0 to 10V, VDS=50V, ID=3A | 1.1 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDD=50V, ID=3A, RG=3Ω | 13 | ns | ||
| Rise Time | tr | VGS=10V, VDD=50V, ID=3A, RG=3Ω | 19 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDD=50V, ID=3A, RG=3Ω | 20 | ns | ||
| Fall Time | tf | VGS=10V, VDD=50V, ID=3A, RG=3Ω | 28 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=3A | 1.2 | V | ||
2509161644_ElecSuper-5N10-ES_C41365185.pdf
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