Lead Free SMD Switching Diode Featuring FMS Formosa Microsemi BAV99 with UL94 V0 Flame Retardant Case
Key Attributes
Model Number:
BAV99
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
2.5uA@70V
Reverse Recovery Time (trr):
6ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
70V
Diode Configuration:
1 Pair Series Connection
Pd - Power Dissipation:
225mW
Voltage - Forward(Vf@If):
1.25V@150mA
Current - Rectified:
215mA
Mfr. Part #:
BAV99
Package:
SOT-23
Product Description
Formosa MS BAL99/BAV99/BAW56/BAV70 SMD Switching Diode
This SMD Switching Diode series, including BAL99, BAV99, BAW56, and BAV70, offers fast speed switching for general-purpose applications. Key advantages include high conductance and a silicon epitaxial planar chip construction. These diodes are lead-free and meet RoHS requirements, with a '-H' suffix indicating Halogen-free parts.
Product Attributes
- Brand: Formosa MS
- Certifications: RoHS compliant (lead-free), Halogen-free option available
- Material: Silicon epitaxial planar chip
- Case: Molded plastic, SOT-23
- Flame Retardant: UL94-V0 rated
Technical Specifications
| Parameter | Symbol | BAL99 | BAV99 | BAW56 | BAV70 | Unit | Min. | Max. |
| Reverse Voltage | VR | 70 | 70 | 70 | 70 | V | ||
| Forward Current | IF | 215 | 200 | 200 | 200 | mA | ||
| Peak Forward Surge Current | IFM | 500 | 500 | 500 | 500 | mA | ||
| Non-Repetitive Peak Forward Surge Current (@ t=1.0us) | IFSM | 2.0 | 2.0 | 2.0 | 2.0 | A | ||
| Non-Repetitive Peak Forward Surge Current (@ t=1.0s) | IFSM | 1.0 | 1.0 | 1.0 | 1.0 | A | ||
| Total Device Dissipation (FR-5 Board*, TA=25C) | PD | 225 | 225 | 225 | 225 | mW | ||
| Derate Above 25C | 1.8 | 1.8 | 1.8 | 1.8 | mW/C | |||
| Total Device Dissipation (Alumina Substrate*, TA=25C) | PD | 556 | 556 | 556 | 556 | mW | ||
| Derate Above 25C | 4.4 | 4.4 | 4.4 | 4.4 | mW/C | |||
| Reverse Voltage Leakage Current (at VR=70V, TJ=25C) | IR | 2.5 | 2.5 | 2.5 | 2.5 | A | ||
| Reverse Voltage Leakage Current (at VR=25V, TJ=150C) | IR | 30 | 30 | 30 | A | |||
| Reverse Voltage Leakage Current (at VR=25V, TJ=150C) | IR | 60 | A | |||||
| Reverse Voltage Leakage Current (at VR=70V, TJ=150C) | IR | 50 | 50 | 50 | A | |||
| Reverse Voltage Leakage Current (at VR=70V, TJ=150C) | IR | 100 | A | |||||
| Diode Capacitance (VR=0V, f=1.0MHz) | CD | 6.0 | 6.0 | 7.0 | 6.0 | pF | ||
| Reverse Recovery Time (IF=IR=10mA, VR=5.0Vdc, IR(REC)=1.0mAdc, RL=100) | trr | 4.0 | 4.0 | 4.0 | 4.0 | ns | ||
| Forward Voltage (at IF=1.0mA) | VF | 0.715 | 0.715 | 0.715 | 0.715 | V | ||
| Forward Voltage (at IF=10mA) | VF | 0.855 | 0.855 | 0.855 | 0.855 | V | ||
| Forward Voltage (at IF=50mA) | VF | 1.000 | 1.000 | 1.000 | 1.000 | V | ||
| Forward Voltage (at IF=150mA) | VF | 1.250 | 1.250 | 1.250 | 1.250 | V | ||
| Reverse Breakdown Voltage (at IBR=100Adc) | VBR | 70 | 70 | 70 | 70 | V |
| Parameter | Symbol | Unit | Min. | Max. |
| Thermal Resistance Junction to Ambient (FR-5 Board*, TA=25C) | RJA | C/W | 556 | |
| Thermal Resistance Junction to Ambient (Alumina Substrate*, TA=25C) | RJA | C/W | 225 | |
| Operating Junction Temperature Range | TJ | C | -55 | +150 |
| Storage Temperature Range | TSTG | C | -55 | +150 |
2410121440_FMS-Formosa-Microsemi-BAV99_C163247.pdf
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