High Reliability P Channel MOSFET ElecSuper ESN7401 Suitable for Various Power Applications
Key Attributes
Model Number:
ESN7401
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
31A
RDS(on):
13mΩ@10V,8A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
145pF@15V
Number:
-
Input Capacitance(Ciss):
1.23nF@15V
Pd - Power Dissipation:
30W
Gate Charge(Qg):
26.4nC@10V
Mfr. Part #:
ESN7401
Package:
DFN3x3
Product Description
Product Overview
The ESN7401 is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and halogen-free.
Product Attributes
- Brand: ElecSuper
- Part Number: ESN7401
- Package: PDFN3X3-8L
- Material: Halogen free
- Flammability Rating: UL 94V-0
- Certifications: Pb-free
- Reel Size: 13 inches
- Quantity per reel: 5,000 PCS
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -30 | V | |||
| Gate-Source Voltage | VGS | ±25 | V | |||
| Continuous Drain Current | ID | TC=25°C | -31 | A | ||
| Continuous Drain Current | ID | TC=75°C | -24 | A | ||
| Maximum Power Dissipation | PD | TC=25°C | 30 | W | ||
| Maximum Power Dissipation | PD | TC=75°C | 18 | W | ||
| Pulsed Drain Current | IDM | a | -124 | A | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | t ≤ 10 s | 40 | °C/W | ||
| Junction-to-Case Thermal Resistance | RθJC | Steady State | 4.2 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-30V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VGS=±25V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.0 | -1.5 | -2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-8A | 13 | 20 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-7A | 17 | 27 | mΩ | |
| Input Capacitance | CISS | VGS=0V, VDS =-15V f=1MHz | 1230 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-15V f=1MHz | 160 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-15V f=1MHz | 145 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V ID =-10A | 26.4 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-15V ID =-10A | 6 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-15V ID =-10A | 4.3 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V RL=1Ω, RG=3Ω | 18 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-15V RL=1Ω, RG=3Ω | 22 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-15V RL=1Ω, RG=3Ω | 55 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-15V RL=1Ω, RG=3Ω | 42 | ns | ||
| Forward Voltage | VSD | VGS=0V, ISD=-10A | -1.5 | V | ||
2504101957_ElecSuper-ESN7401_C5140351.pdf
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