40V N Channel MOSFET FETek FKD4006 Featuring Low RDS ON and High Cell Density for Power Applications
Key Attributes
Model Number:
FKD4006
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
60A
RDS(on):
7.5mΩ@10V,12A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
138pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
2.332nF@15V
Pd - Power Dissipation:
44.6W
Gate Charge(Qg):
18.8nC@4.5V
Mfr. Part #:
FKD4006
Package:
TO-252
Product Description
FKD4006 N-Ch 40V Fast Switching MOSFETs
The FKD4006 is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval, providing super low gate charge and excellent CdV/dt effect decline.
Product Attributes
- Brand: FETek Technology Corp.
- Certifications: RoHS, Green Product
- Type: N-Channel MOSFET
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | V | ||
| VGS=0V , ID=250uA | V | |||||
| VGS=0V , ID=250uA | V | |||||
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | 0.034 | V/ | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=12A | 7.5 | m | ||
| VGS=4.5V , ID=10A | 10 | m | ||||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | 2.5 | V | |
| VGS=VDS , ID =250uA | V | |||||
| VGS(th) | VGS(th) Temperature Coefficient | -4.96 | mV/ | |||
| IDSS | Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25 | 1 | uA | ||
| VDS=32V , VGS=0V , TJ=55 | 5 | uA | ||||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | 100 | nA | ||
| gfs | Forward Transconductance | VDS=5V , ID=12A | 39 | S | ||
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | 1.6 | |||
| Qg | Total Gate Charge | VDS=20V , VGS=4.5V , ID=12A | 18.8 | nC | ||
| VDS=20V , VGS=4.5V , ID=12A | nC | |||||
| VDS=20V , VGS=4.5V , ID=12A | nC | |||||
| Qgs | Gate-Source Charge | VDS=20V , VGS=4.5V , ID=12A | 4.7 | |||
| Qgd | Gate-Drain Charge | VDS=20V , VGS=4.5V , ID=12A | 8.2 | |||
| Td(on) | Turn-On Delay Time | VDD=15V , VGS=10V , RG=3.3 ID=1A | 14.3 | ns | ||
| VDD=15V , VGS=10V , RG=3.3 ID=1A | ||||||
| VDD=15V , VGS=10V , RG=3.3 ID=1A | ||||||
| Tr | Rise Time | VDD=15V , VGS=10V , RG=3.3 ID=1A | 2.6 | ns | ||
| VDD=15V , VGS=10V , RG=3.3 ID=1A | ||||||
| VDD=15V , VGS=10V , RG=3.3 ID=1A | ||||||
| Td(off) | Turn-Off Delay Time | VDD=15V , VGS=10V , RG=3.3 ID=1A | 77 | ns | ||
| VDD=15V , VGS=10V , RG=3.3 ID=1A | ||||||
| VDD=15V , VGS=10V , RG=3.3 ID=1A | ||||||
| Tf | Fall Time | VDD=15V , VGS=10V , RG=3.3 ID=1A | 4.8 | ns | ||
| VDD=15V , VGS=10V , RG=3.3 ID=1A | ||||||
| VDD=15V , VGS=10V , RG=3.3 ID=1A | ||||||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | 2332 | pF | ||
| VDS=15V , VGS=0V , f=1MHz | ||||||
| VDS=15V , VGS=0V , f=1MHz | ||||||
| Coss | Output Capacitance | VDS=15V , VGS=0V , f=1MHz | 193 | pF | ||
| Crss | Reverse Transfer Capacitance | VDS=15V , VGS=0V , f=1MHz | 138 | pF | ||
| IS | Continuous Source Current | VG=VD=0V , Force Current | 60 | A | ||
| VG=VD=0V , Force Current | ||||||
| ISM | Pulsed Source Current | 120 | A | |||
| VSD | Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | 1 | V |
2411220326_FETek-FKD4006_C7529477.pdf
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