Low gate charge MOSFET ElecSuper EST05N10 N Channel type designed for power switch and DC DC conversion
Key Attributes
Model Number:
EST05N10
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
2.6A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
90mΩ@10V;120mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.65V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
1.4pF
Number:
1 N-channel
Output Capacitance(Coss):
29pF
Input Capacitance(Ciss):
206pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
4.2nC@10V
Mfr. Part #:
EST05N10
Package:
SOT-23
Product Description
EST05N10 N-Channel Advance MOSFET
The EST05N10 is an N-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology and design. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This standard product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Model: EST05N10
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Pb-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | BVDSS | VGS=0V, ID=250uA | 100 | V | ||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | 3 | A | ||
| TA=100°C | 2.2 | A | ||||
| Maximum Power Dissipation | PD | 3.1 | W | |||
| Pulsed Drain Current | IDM | 12 | A | |||
| Operating Junction Temperature | TJ | -55 | 150 | °C | ||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | 1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.65 | 2.5 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=3A | 95 | 130 | mΩ | |
| VGS=4.5V, ID=1A | 135 | 190 | mΩ | |||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=50V | 200 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=50V | 30 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=50V | 3 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=0 to 10V, VDS=50V, ID=3A | 4 | nC | ||
| Gate-to-Source Charge | QGS | VGS=0 to 10V, VDS=50V, ID=3A | 0.9 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=0 to 10V, VDS=50V, ID=3A | 1.1 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDD=50V, ID=3A, RG=3Ω | 13 | ns | ||
| Rise Time | tr | VGS=10V, VDD=50V, ID=3A, RG=3Ω | 19 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDD=50V, ID=3A, RG=3Ω | 20 | ns | ||
| Fall Time | tf | VGS=10V, VDD=50V, ID=3A, RG=3Ω | 28 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=3A | 1.2 | V | ||
2509161644_ElecSuper-EST05N10_C41365196.pdf
Related Products
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Zener diode YANGJIE BZT52C3V0SQ featuring moisture sensitivity level 1 and solderable tin plated leads
Product OverviewThe BZT52C2V4SQ thru BZT52C47SQ series are small signal Zener diodes designed for general regulation functions, including automotive applications. They feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. These diodes offer ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
