N Channel 80V Fast Switching MOSFET FETek FKD8066 for DC DC Converters and Motor Driver Applications
Key Attributes
Model Number:
FKD8066
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
60A
RDS(on):
8.7mΩ@10V,15A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V
Reverse Transfer Capacitance (Crss@Vds):
12pF@40V
Number:
1 N-channel
Input Capacitance(Ciss):
1.738nF@40V
Pd - Power Dissipation:
52W
Gate Charge(Qg):
29nC@10V
Mfr. Part #:
FKD8066
Package:
TO-252
Product Description
Product Overview
The FKD8066 is an N-Channel 80V Fast Switching MOSFET designed for high-frequency switching and synchronous rectification. It features advanced trench MOS technology, 100% EAS guaranteed, and fast switching speed. This MOSFET is ideal for DC/DC converters and motor driver applications.
Product Attributes
- Brand: FETek Technology Corp.
- Model: FKD8066
- Technology: Advanced Trench MOS
- Certifications: Green Device Available
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Units |
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V , ID=250uA | 80 | V | ||
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=10V , ID=15A | 6.5 | 8.7 | m | |
| Static Drain-Source On-Resistance (RDS(ON)) | VGS=4.5V , ID=15A | 9 | 12.5 | m | |
| Gate Threshold Voltage (VGS(th)) | VGS=VDS , ID =250uA | 1.2 | 1.55 | 2.3 | V |
| Drain-Source Leakage Current (IDSS) | VDS=64V , VGS=0V , TJ=25 | 1 | uA | ||
| Drain-Source Leakage Current (IDSS) | VDS=64V , VGS=0V , TJ=55 | 5 | uA | ||
| Gate-Source Leakage Current (IGSS) | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Resistance (Rg) | VDS=0V , VGS=0V , f=1MHz | 1.6 | |||
| Total Gate Charge (Qg) | VDS=40V , VGS=10V , ID=15A | 29 | nC | ||
| Gate-Source Charge (Qgs) | 7.7 | nC | |||
| Gate-Drain Charge (Qgd) | 5.3 | nC | |||
| Turn-On Delay Time (Td(on)) | VDD=40V , VGS=10V , RG=3.3, ID=10A | 6.2 | ns | ||
| Rise Time (Tr) | 19 | ns | |||
| Turn-Off Delay Time (Td(off)) | 9.4 | ns | |||
| Fall Time (Tf) | 36 | ns | |||
| Input Capacitance (Ciss) | VDS=40V , VGS=0V , f=1MHz | 1738 | pF | ||
| Output Capacitance (Coss) | 317 | pF | |||
| Reverse Transfer Capacitance (Crss) | 12 | pF | |||
| Continuous Source Current (IS) | VG=VD=0V , Force Current | 30 | A | ||
| Diode Forward Voltage (VSD) | VGS=0V , IS=1A , TJ=25 | 1.2 | V | ||
| Reverse Recovery Time (Trr) | IF=10A , dI/dt=100A/s , TJ=25 | 35 | nS | ||
| Reverse Recovery Charge (Qrr) | 62 | nC |
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 80 | V |
| VGS | Gate-Source Voltage | 20 | V |
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 60 | A |
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 38 | A |
| IDM | Pulsed Drain Current | 200 | A |
| EAS | Single Pulse Avalanche Energy | 101 | mJ |
| IAS | Avalanche Current | 45 | A |
| PD@TC=25 | Total Power Dissipation | 52 | W |
| TSTG | Storage Temperature Range | -55 to 150 | |
| TJ | Operating Junction Temperature Range | -55 to 150 |
| Symbol | Parameter | Typ. | Max. | Units |
| RJA | Thermal Resistance Junction-Ambient | 62 | /W | |
| RJC | Thermal Resistance Junction-Case | 2.4 | /W |
2411220137_FETek-FKD8066_C5361874.pdf
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