Durable ElecSuper ESTF409 P Channel MOSFET Suitable for DC DC Conversion and Power Switch Applications
Key Attributes
Model Number:
ESTF409
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
12.7A
RDS(on):
27mΩ@10V;31mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
160pF
Number:
1 P-Channel
Output Capacitance(Coss):
180pF
Pd - Power Dissipation:
8.3W
Input Capacitance(Ciss):
3.02nF
Gate Charge(Qg):
46.6nC@10V
Mfr. Part #:
ESTF409
Package:
TO-220F
Product Description
Product Overview
The ESTF409 is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology for excellent RDS(ON) and low gate charge. It is suitable for DC-DC conversion, power switch, and charging circuit applications, offering fast switching, high density cell design, and a reliable, rugged construction.
Product Attributes
- Brand: ElecSuper
- Model: ESTF409
- Package: TO-220F
- Material: Halogen free
- Certifications: UL 94V-0
- Origin: Not specified
- Color: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | -60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | -12.7 | A | ||
| Continuous Drain Current | ID | TA=75°C | -10 | A | ||
| Maximum Power Dissipation | PD | TA=25°C | 8.3 | W | ||
| Maximum Power Dissipation | PD | TA=75°C | 5 | W | ||
| Pulsed Drain Current | IDM | -96 | A | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | +150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | Single Operation (t≤10s) | 12 | 15 | °C/W | |
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -1.1 | -1.6 | -2.1 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-20A | 27 | 34 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=-4.5V, ID=-20A | 31 | 38 | mΩ | |
| Forward Transconductance | gFS | VDS=-5V, ID=-20A | 60 | S | ||
| Input Capacitance | CISS | VGS=0V, VDS =-20V, f=1MHz | 3020 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS =-20V, f=1MHz | 180 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS =-20V, f=1MHz | 160 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-20V, ID =-10A | 46.6 | nC | ||
| Gate-to-Source Charge | QGS | VGS=-10V, VDS=-20V, ID =-10A | 9.1 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=-10V, VDS=-20V, ID =-10A | 6.2 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V, ID=-1A, RG=3Ω | 45 | ns | ||
| Rise Time | tr | VGS=-10V, VDS=-15V, ID=-1A, RG=3Ω | 28 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=-10V, VDS=-15V, ID=-1A, RG=3Ω | 80 | ns | ||
| Fall Time | tf | VGS=-10V, VDS=-15V, ID=-1A, RG=3Ω | 6.6 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=-1.0A | -1.2 | V | ||
2504101957_ElecSuper-ESTF409_C5350992.pdf
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