Power MOSFET FM 4060K N Channel Trench Type Ideal for Hard Switched and High Frequency Power Circuits
Key Attributes
Model Number:
4060K
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+175℃
RDS(on):
12mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
176pF
Number:
1 N-channel
Output Capacitance(Coss):
195pF
Pd - Power Dissipation:
42W
Input Capacitance(Ciss):
2.246nF
Gate Charge(Qg):
52nC@10V
Mfr. Part #:
4060K
Package:
TO-252-2
Product Description
Product Overview
The 4060K is an N-Channel Trench Power MOSFET designed for high-performance applications. It features a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and excellent heat dissipation. This MOSFET is suitable for load switches, hard-switched and high-frequency circuits, and uninterruptible power supplies.
Product Attributes
- Brand: SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. (Superchip)
- Origin: China
- Model Number: 4060K
- Document Number: S&CIC1774
- Version: 1.0
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDSS) | 40 | V | |||
| Gate-Source Voltage (VGSS) | ±20 | V | |||
| Continuous Drain Current (ID) | TC = 25°C | 60 | A | ||
| Continuous Drain Current (ID) | TC = 100°C | 42 | A | ||
| Pulsed Drain Current (IDM) | note1 | 210 | A | ||
| Single Pulsed Avalanche Energy (EAS) | note2 | 106 | mJ | ||
| Power Dissipation (PD) | TC = 25°C | 42 | W | ||
| Thermal Resistance, Junction to Case (RθJC) | 2.8 | °C/W | |||
| Operating and Storage Temperature Range (TJ, TSTG) | -55 | +175 | °C | ||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (V(BR)DSS) | VGS=0V,ID=250μA | 40 | - | - | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS =40V, VGS = 0V | - | - | 1.0 | μA |
| Gate to Body Leakage Current (IGSS) | VDS =0V,VGS = ±20V | - | - | ±100 | nA |
| Gate Threshold Voltage (VGS(th)) | VDS= VGS, ID=250μA | 1.1 | 1.65 | 2.4 | V |
| Static Drain-Source on-Resistance (RDS(on)) | VGS =10V, ID =30A, note3 | - | 6.8 | 8 | mΩ |
| Static Drain-Source on-Resistance (RDS(on)) | VGS =4.5V, ID =20A, note3 | - | 9.5 | 12 | mΩ |
| Forward Transconductance (gFS) | VDS =5V, ID =15A | 10 | 25 | - | S |
| Input Capacitance (Ciss) | VDS = 20V, VGS =0V, f = 1.0MHz | - | 2246 | - | pF |
| Output Capacitance (Coss) | VDS = 20V, VGS =0V, f = 1.0MHz | - | 195 | - | pF |
| Reverse Transfer Capacitance (Crss) | VDS = 20V, VGS =0V, f = 1.0MHz | - | 176 | - | pF |
| Total Gate Charge (Qg) | VDS =20V, ID =30A, VGS =10V | - | 52 | - | nC |
| Gate-Source Charge (Qgs) | VDS =20V, ID =30A, VGS =10V | - | 8 | - | nC |
| Gate-Drain (Miller) Charge (Qgd) | VDS =20V, ID =30A, VGS =10V | - | 14 | - | nC |
| Turn-on Delay Time (td(on)) | VDD=20V, ID =30A, RL=1Ω, RGEN=3Ω, VGS =10V | - | 13 | - | ns |
| Turn-on Rise Time (tr) | VDD=20V, ID =30A, RL=1Ω, RGEN=3Ω, VGS =10V | - | 37 | - | ns |
| Turn-off Delay Time (td(off)) | VDD=20V, ID =30A, RL=1Ω, RGEN=3Ω, VGS =10V | - | 46 | - | ns |
| Turn-off Fall Time (tf) | VDD=20V, ID =30A, RL=1Ω, RGEN=3Ω, VGS =10V | - | 15 | - | ns |
| Drain-Source Diode Characteristics and Maximum Ratings | |||||
| Maximum Continuous Drain to Source Diode Forward Current (IS) | - | - | 60 | A | |
| Maximum Pulsed Drain to Source Diode Forward Current (ISM) | - | - | 210 | A | |
| Drain to Source Diode Forward Voltage (VSD) | VGS =0V, IS=30A | - | - | 1.2 | V |
| Body Diode Reverse Recovery Time (trr) | TJ=25°C, IF=20A,dI/dt=100A/μs | - | 15 | - | ns |
| Body Diode Reverse Recovery Charge (Qrr) | TJ=25°C, IF=20A,dI/dt=100A/μs | - | 8 | - | nC |
2410121830_FM-4060K_C2932018.pdf
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