Low gate charge ElecSuper AO4884 N channel MOSFET designed for power switching and charging circuits
Key Attributes
Model Number:
AO4884
Product Custom Attributes
Drain To Source Voltage:
45V
Current - Continuous Drain(Id):
9.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
17mΩ@10V;22mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
140pF
Number:
2 N-Channel
Output Capacitance(Coss):
215pF
Input Capacitance(Ciss):
1.5nF
Pd - Power Dissipation:
3.2W
Gate Charge(Qg):
28nC@4.5V
Mfr. Part #:
AO4884
Package:
SOP8
Product Description
AO4884 SuperMOS SOP8 N-channel MOSFET
The AO4884 is an N-Channel enhancement mode MOSFET utilizing advanced trench technology for superior RDS(ON) and low gate charge. It is ideal for DC-DC conversion, power switching, and charging circuits, offering high density cell design, avalanche rating, and low leakage current. This product is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Rating & Thermal Characteristics | ||||||
| Drain-Source Voltage | BVDSS | 45 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | TA=25°C | 9.6 | A | ||
| Continuous Drain Current | ID | TA=75°C | 7.5 | A | ||
| Maximum Power Dissipation | PD | TA=25°C | 3.2 | W | ||
| Maximum Power Dissipation | PD | TA=75°C | 1.9 | W | ||
| Pulsed Drain Current | IDM | 38 | A | |||
| Avalanche Current, Single Pulsed | IAS | a | 14 | A | ||
| Avalanche Energy, Single Pulsed | EAS | a | 29 | mJ | ||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Lead Temperature | TL | 260 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Junction-to-Ambient Thermal Resistance | RθJA | a t ≤ 10 s | 32 | 40 | ° C/W | |
| Electrical Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 45 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=45V, VGS=0V | 1.0 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=±20V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=250uA | 1.0 | 1.4 | 1.8 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=10V, ID=8A | 17 | 22 | mΩ | |
| Drain-to-source On-resistance | RDS(on) | VGS=4.5V, ID=6A | 22 | 30 | mΩ | |
| Forward Transconductance | gFS | VDS=5.0V, ID=8A | 80 | S | ||
| Input Capacitance | CISS | VGS=0V, f=1MHz, VDS=15V | 1500 | pF | ||
| Output Capacitance | COSS | VGS=0V, f=1MHz, VDS=15V | 215 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, f=1MHz, VDS=15V | 140 | pF | ||
| Total Gate Charge | QG(TOT) | VGS=4.5V, VDS=15V, ID=8A | 28 | nC | ||
| Gate-to-Source Charge | QGS | VGS=4.5V, VDS=15V, ID=8A | 4.5 | nC | ||
| Gate-to-Drain Charge | QGD | VGS=4.5V, VDS=15V, ID=8A | 6.6 | nC | ||
| Turn-On Delay Time | td(ON) | VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω | 6.5 | ns | ||
| Rise Time | tr | VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω | 17.6 | ns | ||
| Turn-Off Delay Time | td(OFF) | VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω | 19.8 | ns | ||
| Fall Time | tf | VGS=10V, VDS=15V, RL=1.5Ω, RGEN=3Ω | 16.6 | ns | ||
| Forward Voltage | VSD | VGS=0V, IS=1.0A | 0.45 | 1.5 | V | |
2504101957_ElecSuper-AO4884_C5224292.pdf
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