P Channel Power MOSFET FM 2301P Lead Free SOT 23 Package Suitable for PWM and Load Switch Applications
Key Attributes
Model Number:
2301P
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
190mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
42pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
332pF@10V
Pd - Power Dissipation:
840mW
Gate Charge(Qg):
3.5nC
Mfr. Part #:
2301P
Package:
SOT-23-3
Product Description
Product Overview
The 2301P is a P-Channel Trench Power MOSFET from SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. It offers high power and current handling capability, making it suitable for PWM applications, load switches, and power management. This lead-free product comes in a SOT-23 surface mount package.
Product Attributes
- Brand: SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD.
- Product Code: 2301P
- Document Number: S&CIC1974
- Package: SOT-23
- Certifications: Lead Free Product is Acquired
Technical Specifications
| Parameter | Test Condition | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | -20 | V | |||
| Gate-Source Voltage (VGSS) | ±12 | V | |||
| Continuous Drain Current (ID) @ TC = 25 | -2.8 | A | |||
| Continuous Drain Current (ID) @ TC = 100 | -1.6 | A | |||
| Power Dissipation (PD) @ TA = 25 | 0.84 | W | |||
| Thermal Resistance (RJA) | Junction to Ambient | 164 | /W | ||
| Operating and Storage Temperature Range (TJ, TSTG) | -55 | +150 | |||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (V(BR)DSS) | VGS=0V, ID= -250A | -20 | V | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS = -20V, VGS = 0V | -1 | µA | ||
| Gate to Body Leakage Current (IGSS) | VDS =0V, VGS = ±12V | ±100 | nA | ||
| Gate Threshold Voltage (VGS(th)) | VDS= VGS, ID= -250µA | -0.4 | -0.65 | -1.0 | V |
| Static Drain-Source on-Resistance (RDS(on)) | VGS =-4.5V, ID =-1A | 110 | 135 | mΩ | |
| Static Drain-Source on-Resistance (RDS(on)) | VGS =-2.5V, ID =-0.5A | 148 | 190 | mΩ | |
| Forward Transconductance (gFS) | VDS =-5V, ID = -1.5A | 3.6 | S | ||
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | VDS = -10V, VGS = 0V, f = 1.0MHz | 332 | pF | ||
| Output Capacitance (Coss) | 68 | pF | |||
| Reverse Transfer Capacitance (Crss) | 42 | pF | |||
| Charge Characteristics | |||||
| Total Gate Charge (Qg) | VDS = -10V, ID = -2.5A, VGS = -4.5V | 3.5 | nC | ||
| Gate-Source Charge (Qgs) | 0.61 | nC | |||
| Gate-Drain (Miller) Charge (Qgd) | 0.88 | nC | |||
| Switching Characteristics | |||||
| Turn-on Delay Time (td(on)) | VDD = -10V, RL=5Ω, RGEN=3Ω,VGS=-4.5V | 18 | ns | ||
| Turn-on Rise Time (tr) | 6.1 | ns | |||
| Turn-off Delay Time (td(off)) | 24.3 | ns | |||
| Turn-off Fall Time (tf) | 8.5 | ns | |||
| Drain-Source Diode Characteristics and Maximum Ratings | |||||
| Maximum Continuous Drain to Source Diode Forward Current (IS) | -2.8 | A | |||
| Drain to Source Diode Forward Voltage (VSD) | VGS = 0V, IS = -2.0A | -1.2 | V | ||
2410121754_FM-2301P_C2834502.pdf
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