Power management MOSFET FM SI2301 10V P channel type with low on resistance and compact SOT 23 package

Key Attributes
Model Number: SI2301
Product Custom Attributes
Drain To Source Voltage:
10V
Current - Continuous Drain(Id):
2.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
150mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Number:
1 P-Channel
Pd - Power Dissipation:
1.25W
Mfr. Part #:
SI2301
Package:
SOT-23
Product Description

Product Overview

This document describes the 10V P-channel enhancement mode MOSFET from SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. It features advanced processing technology, extremely low on-resistance, and a high-density cell design, making it suitable for various applications requiring efficient power management. The device is housed in a SOT-23 package.

Product Attributes

  • Brand: FINE MADE ()
  • Origin: China
  • Product Code: 2301
  • File Number: S&CIC1596
  • Website: www.superchip.cn

Technical Specifications

ParameterSymbolTest ConditionMinTypicalMaxUnit
On-ResistanceRDS(on)VGS = -4.5V, ID = -1A100120m
RDS(on)VGS = -2.5V, ID = -0.5A125150m
Gate Threshold VoltageVGS(th)VDS = VGS, ID = -250uA-0.4-0.6-1.0V
Drain Leakage Current (Gate shorted)IDSSVDS = -7V, VGS = 0V1uA
Gate Leakage Current (Drain shorted)IGSSVGS = 7V, IDS=0uA100nA
Drain-Source Breakdown VoltageBVDSSVGS = 0V, ID = -250uA-8-10V
Diode Maximum Forward CurrentIS1.4A
Diode Forward VoltageVSDIS = -1.6A, VGS = 0V-1.3V
ParameterSymbolValueUnit
Drain-Source VoltageVDS-10V
Gate-Source VoltageVGS10V
Continuous Drain CurrentID-2.2A
Pulsed Drain CurrentIDM-5A
Maximum Power DissipationPD1.25W (TA=25)
0.8W (TA=75)
Operating Junction and Storage Temperature RangeTJ, Tstg-55 to 150
Thermal Resistance Junction to Ambient (PCB mount)RJA140W/

2410121241_FM-SI2301_C337189.pdf

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