Power management MOSFET FM SI2301 10V P channel type with low on resistance and compact SOT 23 package
Product Overview
This document describes the 10V P-channel enhancement mode MOSFET from SHEN ZHEN FINE MADE ELECTRONICS GROUP CO., LTD. It features advanced processing technology, extremely low on-resistance, and a high-density cell design, making it suitable for various applications requiring efficient power management. The device is housed in a SOT-23 package.
Product Attributes
- Brand: FINE MADE ()
- Origin: China
- Product Code: 2301
- File Number: S&CIC1596
- Website: www.superchip.cn
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typical | Max | Unit |
| On-Resistance | RDS(on) | VGS = -4.5V, ID = -1A | 100 | 120 | m | |
| RDS(on) | VGS = -2.5V, ID = -0.5A | 125 | 150 | m | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = -250uA | -0.4 | -0.6 | -1.0 | V |
| Drain Leakage Current (Gate shorted) | IDSS | VDS = -7V, VGS = 0V | 1 | uA | ||
| Gate Leakage Current (Drain shorted) | IGSS | VGS = 7V, IDS=0uA | 100 | nA | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = -250uA | -8 | -10 | V | |
| Diode Maximum Forward Current | IS | 1.4 | A | |||
| Diode Forward Voltage | VSD | IS = -1.6A, VGS = 0V | -1.3 | V |
| Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDS | -10 | V |
| Gate-Source Voltage | VGS | 10 | V |
| Continuous Drain Current | ID | -2.2 | A |
| Pulsed Drain Current | IDM | -5 | A |
| Maximum Power Dissipation | PD | 1.25 | W (TA=25) |
| 0.8 | W (TA=75) | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to 150 | |
| Thermal Resistance Junction to Ambient (PCB mount) | RJA | 140 | W/ |
2410121241_FM-SI2301_C337189.pdf
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