Compact Fuji Electric FGW40XS120C IGBT Module with Halogen Free Molding Compound and RoHS Compliance
Key Attributes
Model Number:
FGW40XS120C
Product Custom Attributes
Pd - Power Dissipation:
351W
Td(off):
250ns
Td(on):
45ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
38pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.9V@40mA
Pulsed Current- Forward(Ifm):
160A
Reverse Recovery Time(trr):
500ns
Switching Energy(Eoff):
1.7mJ
Turn-On Energy (Eon):
1.4mJ
Mfr. Part #:
FGW40XS120C
Package:
TO-247
Product Description
Product Overview
The FGW40XS120C is a Discrete IGBT from Fuji Electric's XS-series, designed for high-voltage and high-current applications. It features Pb-free lead terminals and a halogen-free molding compound, making it RoHS compliant. This IGBT is suitable for demanding applications such as Uninterrupted Power Supplies, PV Power Conditioners, and Inverter welding machines.
Product Attributes
- Brand: Fuji Electric
- Series: XS-series
- Certifications: Pb-free lead terminal, RoHS compliant, Halogen-free molding compound
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit | Remarks |
| Absolute Maximum Ratings | |||||||
| Collector-Emitter Voltage | VCES | 1200 | V | ||||
| Gate-Emitter Voltage | VGES | ±20 | V | ||||
| Transient Gate-Emitter Voltage | tp < 1 μs | ±30 | V | ||||
| DC Collector Current | IC@25 | TC = 25 °C | 63 | A | |||
| DC Collector Current | IC@100 | TC = 100 °C | 40 | A | |||
| Pulsed Collector Current | ICP | 160 | A | Note *1 | |||
| Turn-Off Safe Operating Area | VCE ≤ 1200 V, Tvj ≤ 175 °C | -160 | A | ||||
| Diode Forward Current | IF@25 | 63 | A | ||||
| Diode Forward Current | IF@100 | 40 | A | ||||
| Diode Pulsed Current | IFP | 160 | A | Note *1 | |||
| IGBT Max. Power Dissipation | Ptot_IGBT | TC = 25 °C | 351 | W | |||
| FWD Max. Power Dissipation | Ptot_FWD | TC = 25 °C | 127 | W | |||
| Operating Junction Temperature | Tvj | -40 | +175 | °C | |||
| Storage Temperature | Tstg | -55 | +175 | °C | |||
| Electrical Characteristics | |||||||
| Zero Gate Voltage Collector Current | ICES | VCE = 1200 V, VGE = 0 V, Tvj = 25 °C | 250 | μA | |||
| Zero Gate Voltage Collector Current | ICES | VCE = 1200 V, VGE = 0 V, Tvj = 175 °C | 2 | mA | |||
| Gate-Emitter Leakage Current | IGES | VCE = 0 V, VGE = ± 20 V | 200 | nA | |||
| Gate-Emitter Threshold Voltage | VGE(th) | VCE = 20 V, IC = 40 mA | 4.9 | 5.5 | 6.1 | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 40 A, Tvj = 25 °C | 1.60 | 1.90 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 40 A, Tvj = 125 °C | 2.05 | - | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 40 A, Tvj = 175 °C | 2.15 | - | V | ||
| Input Capacitance | Cies | VCE = 25 V, VGE = 0 V, f = 1 MHz | 4700 | - | pF | ||
| Output Capacitance | Coes | 66 | - | pF | |||
| Reverse Transfer Capacitance | Cres | 38 | - | pF | |||
| Gate Charge | QG | VCC = 600 V, IC = 40 A, VGE = 15 V | 250 | - | nC | ||
| Turn-On Delay Time | td(on) | VCC = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω, Tvj= 25 °C | 45 | - | ns | Energy loss include tail and FWD reverse recovery. | |
| Rise Time | tr | 32 | - | ns | |||
| Turn-Off Delay Time | td(off) | 250 | - | ns | |||
| Fall Time | tf | 60 | - | ns | |||
| Turn-On Energy | Eon | 1.4 | - | mJ | |||
| Turn-Off Energy | Eoff | 1.7 | - | mJ | |||
| Turn-On Delay Time | td(on) | VCC = 600 V, IC = 40 A, VGE = 15 V, RG = 10 Ω, Tvj = 175 °C | 44 | - | ns | Energy loss include tail and FWD reverse recovery. | |
| Rise Time | tr | 26 | - | ns | |||
| Turn-Off Delay Time | td(off) | 280 | - | ns | |||
| Fall Time | tf | 130 | - | ns | |||
| Turn-On Energy | Eon | 2.2 | - | mJ | |||
| Turn-Off Energy | Eoff | 2.0 | - | mJ | |||
| Forward Voltage Drop | VF | IF = 40 A, Tvj = 25 °C | 2.90 | 3.30 | V | ||
| Forward Voltage Drop | VF | IF = 40 A, Tvj = 125 °C | 3.20 | - | V | ||
| Forward Voltage Drop | VF | IF = 40 A, Tvj = 175 °C | 3.20 | - | V | ||
| Diode Reverse Recovery Time | trr | VCC = 600 V, IF = 40 A, -diF/dt = 300 A/μs, Tvj = 25 °C | 230 | - | ns | ||
| Diode Reverse Recovery Charge | Qrr | 1.10 | - | μC | |||
| Diode Reverse Recovery Time | trr | VCC = 600 V, IF = 40 A, -diF/dt = 300 A/μs, Tvj = 175 °C | 500 | - | ns | ||
| Diode Reverse Recovery Charge | Qrr | 2.30 | - | μC | |||
| Thermal Resistance | |||||||
| Thermal Resistance, Junction-Ambient | Rth(j-a) | - | - | 50 | °C/W | ||
| Thermal Resistance, IGBT Junction to Case | Rth(j-c)_IGBT | - | - | 0.427 | °C/W | ||
| Thermal Resistance, FWD Junction to Case | Rth(j-c)_FWD | - | - | 1.176 | °C/W | ||
2410121936_Fuji-Electric-FGW40XS120C_C7461435.pdf
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