P Channel MOSFET ElecSuper CJ3407 ES suitable for DC DC conversion power switch and charging circuit

Key Attributes
Model Number: CJ3407-ES
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
2.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
46mΩ@10V,3A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
63pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
550pF@15V
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
6.5nC@10V
Mfr. Part #:
CJ3407-ES
Package:
SOT-23
Product Description

Product Overview

The CJ3407-ES is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and Halogen free.

Product Attributes

  • Brand: ElecSuper
  • Material: Halogen free
  • Certifications: UL 94V-0
  • Color: Not specified
  • Origin: Not specified

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
Drain-Source Breakdown VoltageBVDSSVGS=0V, ID=-250uA-30V
Zero Gate Voltage Drain CurrentIDSSVDS=-30V, VGS=0V-1uA
Gate-to-source Leakage CurrentIGSSVDS=0V, VGS=20V100nA
Gate Threshold VoltageVGS(TH)VGS=VDS, ID=-250uA-0.9-1.5-2.0V
Drain-to-source On-resistanceRDS(on)VGS=-10V, ID=-3A4660m
VGS=-4.5V, ID=-3A6280
Input CapacitanceCISSVGS=0V, VDS =-15V, f=1MHz550pF
Output CapacitanceCOSS75
Reverse Transfer CapacitanceCRSS63
Total Gate ChargeQG(TOT)VGS=-10V, VDS=-15V, ID =-4A6.5nC
Gate-to-Source ChargeQGS1.1
Gate-to-Drain ChargeQGD1.3
Turn-On Delay Timetd(ON)VGS=-10V, VDS=-15V, RL=3.5, RG=314ns
Rise Timetr60
Turn-Off Delay Timetd(OFF)19
Fall Timetf11
Forward VoltageVSDVGS=0V, IS=-1.0A-0.7-1.5V

2411220030_ElecSuper-CJ3407-ES_C5224207.pdf

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