P Channel MOSFET ElecSuper CJ3407 ES suitable for DC DC conversion power switch and charging circuit
Product Overview
The CJ3407-ES is a P-Channel enhancement MOS Field Effect Transistor utilizing advanced trench technology. It offers excellent RDS(ON) with low gate charge, making it suitable for DC-DC conversion, power switch, and charging circuit applications. This device is Pb-free and Halogen free.
Product Attributes
- Brand: ElecSuper
- Material: Halogen free
- Certifications: UL 94V-0
- Color: Not specified
- Origin: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | uA | ||
| Gate-to-source Leakage Current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS=VDS, ID=-250uA | -0.9 | -1.5 | -2.0 | V |
| Drain-to-source On-resistance | RDS(on) | VGS=-10V, ID=-3A | 46 | 60 | m | |
| VGS=-4.5V, ID=-3A | 62 | 80 | ||||
| Input Capacitance | CISS | VGS=0V, VDS =-15V, f=1MHz | 550 | pF | ||
| Output Capacitance | COSS | 75 | ||||
| Reverse Transfer Capacitance | CRSS | 63 | ||||
| Total Gate Charge | QG(TOT) | VGS=-10V, VDS=-15V, ID =-4A | 6.5 | nC | ||
| Gate-to-Source Charge | QGS | 1.1 | ||||
| Gate-to-Drain Charge | QGD | 1.3 | ||||
| Turn-On Delay Time | td(ON) | VGS=-10V, VDS=-15V, RL=3.5, RG=3 | 14 | ns | ||
| Rise Time | tr | 60 | ||||
| Turn-Off Delay Time | td(OFF) | 19 | ||||
| Fall Time | tf | 11 | ||||
| Forward Voltage | VSD | VGS=0V, IS=-1.0A | -0.7 | -1.5 | V |
2411220030_ElecSuper-CJ3407-ES_C5224207.pdf
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