N channel MOSFET FETek FKBA3004 with high cell density trench technology and fast switching capability
Key Attributes
Model Number:
FKBA3004
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
58A
Operating Temperature -:
-55℃~+150℃
RDS(on):
8.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
183pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.844nF@15V
Pd - Power Dissipation:
46W
Gate Charge(Qg):
17.6nC@4.5V
Mfr. Part #:
FKBA3004
Package:
PRPAK(5x6)
Product Description
Product Overview
The FKBA3004 is a high cell density trenched N-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and gate charge characteristics, making it suitable for various applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Brand: FETek Technology Corp.
- Certifications: RoHS, Green Product, 100% EAS Guaranteed
- Technology: Advanced high cell density Trench technology
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Units |
| Absolute Maximum Ratings | |||||
| VDS | Drain-Source Voltage | 30 | V | ||
| VGS | Gate-Source Voltage | 20 | V | ||
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 58 | A | ||
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 38 | A | ||
| ID@TA=25 | Continuous Drain Current, VGS @ 10V | 12 | A | ||
| ID@TA=70 | Continuous Drain Current, VGS @ 10V | 9.6 | A | ||
| IDM | Pulsed Drain Current | 115 | A | ||
| EAS | Single Pulse Avalanche Energy | 57.8 | mJ | ||
| IAS | Avalanche Current | 34 | A | ||
| PD@TC=25 | Total Power Dissipation | 46 | W | ||
| PD@TA=25 | Total Power Dissipation | 2 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | ||
| TJ | Operating Junction Temperature Range | -55 | 150 | ||
| Thermal Data | |||||
| RJA | Thermal Resistance Junction-Ambient | --- | 62 | /W | |
| RJC | Thermal Resistance Junction-Case | --- | 2.7 | /W | |
| Electrical Characteristics | |||||
| BVDSS | Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) | 30 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance (VGS=10V, ID=30A) | 6.5 | 8.5 | m | |
| RDS(ON) | Static Drain-Source On-Resistance (VGS=4.5V, ID=15A) | 11 | 14 | V | |
| VGS(th) | Gate Threshold Voltage (VGS=VDS, ID=250uA) | 1.2 | 1.5 | 2.5 | V |
| IDSS | Drain-Source Leakage Current (VDS=24V, VGS=0V, TJ=25) | --- | 1 | uA | |
| IGSS | Gate-Source Leakage Current (VGS=20V, VDS=0V) | --- | 100 | nA | |
| Qg | Total Gate Charge (VDS=15V, VGS=4.5V, ID=15A) | 12.6 | 17.6 | nC | |
| Ciss | Input Capacitance (VDS=15V, VGS=0V, f=1MHz) | 1317 | 1844 | pF | |
| Coss | Output Capacitance (VDS=15V, VGS=0V, f=1MHz) | 163 | 228 | pF | |
| Crss | Reverse Transfer Capacitance (VDS=15V, VGS=0V, f=1MHz) | 131 | 183 | pF | |
| Diode Characteristics | |||||
| IS | Continuous Source Current (VG=VD=0V) | --- | 58 | A | |
| ISM | Pulsed Source Current | --- | 115 | A | |
| VSD | Diode Forward Voltage (VGS=0V, IS=1A, TJ=25) | --- | 1 | V | |
| trr | Reverse Recovery Time (IF=30A, dI/dt=100A/s, TJ=25) | 9.2 | --- | nS | |
| Qrr | Reverse Recovery Charge (IF=30A, dI/dt=100A/s, TJ=25) | 2 | --- | nC | |
2410121617_FETek-FKBA3004_C2758590.pdf
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